EL5132ISZ-T13 Intersil, EL5132ISZ-T13 Datasheet - Page 9
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EL5132ISZ-T13
Manufacturer Part Number
EL5132ISZ-T13
Description
IC AMP VFA 670MHZ LO NOISE 8SOIC
Manufacturer
Intersil
Datasheet
1.EL5132IS.pdf
(13 pages)
Specifications of EL5132ISZ-T13
Amplifier Type
Voltage Feedback
Number Of Circuits
1
Slew Rate
1000 V/µs
Gain Bandwidth Product
3GHz
-3db Bandwidth
670MHz
Current - Input Bias
12µA
Voltage - Input Offset
500µV
Current - Supply
11mA
Current - Output / Channel
140mA
Voltage - Supply, Single/dual (±)
5 V ~ 12 V, ±2.5 V ~ 6 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Output Type
-
Typical Performance Curves
FIGURE 33. PACKAGE POWER DISSIPATION vs AMBIENT
FIGURE 31. SUPPLY CURRENT vs SUPPLY VOLTAGE
12.0
10.8
10.6
10.4
10.2
11.8
11.6
11.4
11.2
11.0
10.0
2.5
1.4
1.2
0.8
0.6
0.4
0.2
R
R
C
1
0
G
L
L
TEMPERATURE
0
= 500Ω
= +1pF
JEDEC JESD51-7 HIGH EFFECTIVE
THERMAL CONDUCTIVITY TEST BOARD
= 25Ω
3.0
435mW
909mW
θ
JA
SOT23-5
= +230°C/W
25
Please note that the curve showed
positive current. The negative
current was almost the same.
AMBIENT TEMPERATURE (°C)
3.5
SUPPLY VOLTAGE (V)
50
4.0
9
75
4.5
85
100
5.0
(Continued)
125
5.5
6.0
150
EL5132, EL5133
FIGURE 34. PACKAGE POWER DISSIPATION vs AMBIENT
1200
1100
1000
900
800
700
600
500
400
300
FIGURE 32. SLEW RATE vs SUPPLY VOLTAGES
2.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1
0
POSITIVE SLEW RATE
TEMPERATURE
0
2.5
JEDEC JESD51-3 LOW EFFECTIVE
THERMAL CONDUCTIVITY TEST BOARD
391mW
625mW
θ
JA
SOT23-5
3.0
= +256°C/W
25
AMBIENT TEMPERATURE (°C)
SUPPLY VOLTAGES (±V)
3.5
50
θ
4.0
JA
NEGATIVE SLEW RATE
75
= +160°C/W
SO8
4.5
85
100
A
R
R
C
V
V
OUT
5.0
G
L
L
= +10
= 500Ω
= +1pF
= 25Ω
= 4V
125
5.5
P-P
6.0
150
May 4, 2007
FN7382.8