EL5175IS-T7 Intersil, EL5175IS-T7 Datasheet - Page 9

• Manufacturer Part Number: EL5175IS-T7
• Description: IC LINE RCVR 550MHZ SGL 8-SOIC
• Manufacturer: Intersil

Specifications of EL5175IS-T7

• Amplifier Type: Differential
• Number Of Circuits: 1
• Slew Rate: 900 V/µs
• Gain Bandwidth Product: 200MHz
• -3db Bandwidth: 550MHz
• Current - Input Bias: 12.5µA
• Voltage - Input Offset: 3000µV
• Current - Supply: 9.6mA
• Current - Output / Channel: 67mA
• Voltage - Supply, Single/dual (±): 4.75 V ~ 11 V, ±2.38 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Output Type: -

Typical Performance Curves
Simplified Schematic
FIGURE 23. PACKAGE POWER DISSIPATION vs AMBIENT
CH1
CH2
1.2
1.0
0.8
0.6
0.4
0.2
0
0
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
870mW
625mW
486mW
M = 100ns
CH1 = 200mV/DIV
CH2 = 5V/DIV
FIGURE 21. ENABLED RESPONSE
TEMPERATURE
25
θ
JA
AMBIENT TEMPERATURE (°C)
MSOP8
= +206°C/W
50
θ
JA
100ns/DIV
QSOP24
= +115°C/W
9
VIN+
75
Q
1
85 100
θ
I
JA
1
= +160°C/W
SO8
R
VIN-
D1
Q
I
(Continued)
2
2
125
V
V
S
REF
+
Q
150
3
I
EL5175, EL5375
3
R
D2
FB
Q
I
4
4
R
R
Q
25
3
1
7
FIGURE 24. PACKAGE POWER DISSIPATION vs AMBIENT
V
S
R
R
-
4
2
CH2
CH1
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Q
0
9
0
Q
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
Q
V
M = 400ns
CH1 = 200mV/DIV
CH2 = 5V/DIV
909mW
870mW
8
1.136W
B2
θ
6
FIGURE 22. DISABLED RESPONSE
TEMPERATURE
JA
MSOP8
= +115°C/W
V
25
B1
AMBIENT TEMPERATURE (°C)
C
C
θ
50
JA
x1
QSOP24
400ns/DIV
= +88°C/W
75
θ
V
JA
OUT
85 100
= +110°C/W
SO8
125
August 25, 2010
150
FN7306.7