EL5410CR Intersil, EL5410CR Datasheet - Page 12

IC OP AMP QUAD 30MHZ R-R 14TSSOP

EL5410CR

Manufacturer Part Number
EL5410CR
Description
IC OP AMP QUAD 30MHZ R-R 14TSSOP
Manufacturer
Intersil
Datasheet

Specifications of EL5410CR

Amplifier Type
Voltage Feedback
Number Of Circuits
4
Output Type
Rail-to-Rail
Slew Rate
33 V/µs
Gain Bandwidth Product
20MHz
-3db Bandwidth
30MHz
Current - Input Bias
2nA
Voltage - Input Offset
3000µV
Current - Supply
2.5mA
Current - Output / Channel
30mA
Voltage - Supply, Single/dual (±)
4.5 V ~ 16.5 V, ±2.25 V ~ 8.25 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
14-TSSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
EL5410CR
Manufacturer:
INTERSIL
Quantity:
20 000
Part Number:
EL5410CRZ
Manufacturer:
Intersil
Quantity:
1 950
when sourcing, and
when sinking.
Where:
If we set the two P
can solve for R
Figure 4 provide a convenient way to see if the device will
overheat. The maximum safe power dissipation can be
found graphically, based on the package type and the
ambient temperature. By using the previous equation, it is a
simple matter to see if P
derating curves. To ensure proper operation, it is important
to observe the recommended derating curves shown in
Figure 3 and Figure 4.
i = 1 to 2 for Dual and 1 to 4 for Quad
V
I
V
I
FIGURE 3. PACKAGE POWER DISSIPATION vs AMBIENT
SMAX
LOAD
S
OUT
P
= Total Supply Voltage
DMAX
1200
1000
800
600
400
200
i = Maximum Output Voltage of the Application
i = Load current
= Maximum Supply Current Per Amplifier
0
0
Packages Mounted on a JEDEC JESD51-7 High Effective
Thermal Conductivity Test Board
=
TEMPERATURE
θ
Σi V
LOAD
JA
[
=110°C/W
SO8
25
DMAX
S
i to avoid device overheat. Figure 3 and
×
θ
1.136W
JA
I
SMAX
MSOP8
=115°C/W
Ambient Temperature (°C)
DMAX
1.0W
equations equal to each other, we
50
909mW
12
+
(
exceeds the device's power
V
75
OUT
833mW
85
i V
θ
100
JA
S
SO14
=88°C/W
- )
MAX T
θ
JA
TSSOP14
×
=100°C/W
I
125
LOAD
J
=125°C
i
]
EL5210, EL5410
150
Unused Amplifiers
It is recommended that any unused amplifiers in a dual and
a quad package be configured as a unity gain follower. The
inverting input should be directly connected to the output
and the non-inverting input tied to the ground plane.
Driving Capacitive Loads
The EL5210 and EL5410 can drive a wide range of
capacitive loads. As load capacitance increases, however,
the -3dB bandwidth of the device will decrease and the
peaking increase. The amplifiers drive 10pF loads in parallel
with 1kΩ with just 1.2dB of peaking, and 100pF with 6.5dB of
peaking. If less peaking is desired in these applications, a
small series resistor (usually between 5Ω and 50Ω) can be
placed in series with the output. However, this will obviously
reduce the gain slightly. Another method of reducing peaking
is to add a "snubber" circuit at the output. A snubber is a
shunt load consisting of a resistor in series with a capacitor.
Values of 150Ω and 10nF are typical. The advantage of a
snubber is that it does not draw any DC load current or
reduce the gain.
Power Supply Bypassing and Printed Circuit
Board Layout
The EL5210 and EL5410 can provide gain at high frequency.
As with any high-frequency device, good printed circuit
board layout is necessary for optimum performance. Ground
plane construction is highly recommended, lead lengths
should be as short as possible and the power supply pins
must be well bypassed to reduce the risk of oscillation. For
normal single supply operation, where the V
connected to ground, a 0.1µF ceramic capacitor should be
placed from V
capacitor should then be connected in parallel, placed in the
region of the amplifier. One 4.7µF capacitor may be used for
multiple devices. This same capacitor combination should be
placed at each supply pin to ground if split supplies are to be
used.
FIGURE 4. PACKAGE POWER DISSIPATION vs AMBIENT
1200
1000
800
600
400
200
0
0
Packages Mounted on a JEDEC JESD51-3 Low Effective
Thermal Conductivity Test Board
606mW
485mW
833mW
MAX T
TEMPERATURE
S
+ to pin to V
25
J
θ
=125°C
JA
MSOP8
=206°C/W
Ambient Temperature (°C)
50
S
625mW
- pin. A 4.7µF tantalum
θ
75
JA
=120°C/W
SO14
85
θ
JA
TSSOP14
100
=165°C/W
θ
JA
S
=160°C/W
- pin is
SO8
125
July 5, 2007
150
FN7185.3

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