TL081CP National Semiconductor, TL081CP Datasheet - Page 2

• Manufacturer Part Number: TL081CP
• Description: IC OP AMP BIFET SINGLE 8DIP
• Manufacturer: National Semiconductor
• Series: BI-FET II™r

Specifications of TL081CP

• Amplifier Type: J-FET
• Number Of Circuits: 1
• Slew Rate: 13 V/µs
• Gain Bandwidth Product: 4MHz
• Current - Input Bias: 50pA
• Voltage - Input Offset: 5000µV
• Current - Supply: 1.8mA
• Voltage - Supply, Single/dual (±): 10 V ~ 30 V, ±5 V ~ 18 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Output Type: -
• Current - Output / Channel: -
• -3db Bandwidth: -
• Other names: *TL081CP; TL081CPNS

Absolute Maximum Ratings
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
Supply Voltage
Power Dissipation (Notes 1 and 6)
Operating Temperature Range
T
Differential Input Voltage
DC Electrical Characteristics
AC Electrical Characteristics
Note 1 For operating at elevated temperature the device must be derated based on a thermal resistance of 120 C W junction to ambient for N package
Note 2 Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage
Note 3 These specifications apply for V
Note 4 The input bias currents are junction leakage currents which approximately double for every 10 C increase in the junction temperature T
production test time the input bias currents measured are correlated to junction temperature In normal operation the junction temperature rises above the ambient
temperature as a result of internal power dissipation P
recommended if input bias current is to be kept to a minimum
Note 5 Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice from
V
Note 6 Max Power Dissipation is defined by the package characteristics Operating the part near the Max Power Dissipation may cause the part to operate
outside guaranteed limits
V
I
I
R
A
V
V
CMRR
PSRR
I
Symbol
SR
GBW
e
i
OS
B
S
Symbol
n
S
j(MAX)
OS
VOL
O
CM
V
IN
n
e
OS
g
5V to
T
g
15V
Slew Rate
Gain Bandwidth Product
Equivalent Input Noise Voltage
Equivalent Input Noise Current
Input Offset Voltage
Average TC of Input Offset
Voltage
Input Offset Current
Input Bias Current
Input Resistance
Large Signal Voltage Gain
Output Voltage Swing
Input Common-Mode Voltage
Range
Common-Mode Rejection Ratio
Supply Voltage Rejection Ratio
Supply Current
Parameter
Parameter
S
e
g
15V and 0 C
D
0 C to
T
j
e
s
(Note 3)
(Note 3)
T
T
A s
670 mW
A
a
a
V
V
T
f
T
g
115 C
g
R
Over Temperature
R
T
T
T
T
T
V
V
Over Temperature
V
V
R
(Note 5)
e
70 C
S
S
A
j
a
j
j s
j
j s
j
S
S
S
O
S
S
S s
18V
30V
e
e
e
e
jA
e
e
e
70 C V
e
e
e
1000 Hz
e
e
e
P
25 C f
70 C
70 C
25 C (Notes 3 4)
25 C (Notes 3 4)
25 C
25 C R
D
g
g
Conditions
10 k
g
g
g
10 k
10 k
g
Conditions
where
15V T
15V T
15V T
15V R
15V
10V R
OS
2
I
e
B
S
Input Voltage Range (Note 2)
Output Short Circuit Duration
Storage Temperature Range
Lead Temp (Soldering 10 seconds)
ESD rating to be determined
T
jA
and I
A
A
jA
A
1000 Hz
A
e
L
L
is the thermal resistance from junction to ambient Use of a heat sink is
e
e
e
e
e
e
100
OS
25 C
25 C
25 C
25 C
10 k
2 k
are measured at V
Min
g
g
Min
25
15
70
70
12
11
CM
e
TL081C
0
TL081C
0 01
Typ
13
25
g
4
10
a
b
Typ
100
100
100
1 8
10
25
50
13 5
5
15
12
12
Max
b
Max
100
200
2 8
65 C to
15
20
4
8
j
Due to the limited
Continuous
120 C W
a
nV Hz
pA Hz
Units
V
MHz
V mV
V mV
150 C
260 C
Units
g
mV
mV
V C
mA
pA
nA
pA
nA
dB
dB
15V
V
V
V
s