LM6365N National Semiconductor, LM6365N Datasheet - Page 4

• Manufacturer Part Number: LM6365N
• Description: IC OP AMP HIGH SPEED 725MHZ 8DIP
• Manufacturer: National Semiconductor
• Series: VIP™r

Specifications of LM6365N

• Amplifier Type: General Purpose
• Number Of Circuits: 1
• Slew Rate: 300 V/µs
• Gain Bandwidth Product: 725MHz
• Current - Input Bias: 2.5µA
• Voltage - Input Offset: 1000µV
• Current - Supply: 5mA
• Current - Output / Channel: 65mA
• Voltage - Supply, Single/dual (±): 4.75 V ~ 32 V, ±2.38 V ~ 16 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Output Type: -
• -3db Bandwidth: -
• Other names: *LM6365N; LM6365

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Symbol
Symbol
V
I
GBW
SR
PBW
t
A
e
i
np-p
S
S
m
D
np-p
DC Electrical Characteristics
The following specifications apply for Supply Voltage =
Boldface limits apply for T
AC Electrical Characteristics
The following specifications apply for Supply Voltage =
Boldface limits apply for T
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
Note 2: Continuous short-circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150˚C.
Note 3: The typical junction-to-ambient thermal resistance of the molded plastic DIP (N) is 105˚C/Watt, and the molded plastic SO (M) package is 155˚C/Watt, and
the cerdip (J) package is 125˚C/Watt. All numbers apply for packages soldered directly into a printed circuit board.
Note 4: All limits guaranteed by testing or correlation.
Note 5: For single supply operation, the following conditions apply: V+ = 5V, V− = 0V, V
to Pin 4 (V−) to realize maximum output swing. This connection will degrade V
Note 6: C
Note 7: In order to achieve optimum AC performance, the input stage was designed without protective clamps. Exeeding the maximum differential input voltage re-
sults in reverse breakdown of the base-emitter junction of one of the input transistors and probable degradation of the input parameters (especially V
Noise).
O
D
L
Gain Bandwidth
Product
Slew Rate
Power Bandwidth
Product
Settling Time
Phase Margin
Differential Gain
Differential Phase
Input Noise Voltage
Input Noise Current
Output Voltage
Swing
Output Short
Circuit Current
Supply Current
5 pF.
Parameter
Parameter
A
A
= T
= T
J
J
= T
= T
F = 20 MHz
Supply =
A
Supply =
V
A
NTSC, A
NTSC, A
F = 10 kHz
F = 10 kHz
10V Step to 0.1%
A
Supply =
R
Supply = +5V
R
Source
Sink
MIN
MIN
V
OUT
V
V
L
L
= +25 (Note 9)
= −25, R
= +25
= 2 k
= 2 k
to T
Conditions
to T
Conditions
= 20 V
V
V
MAX
MAX
±
±
±
= +25
= +25
5V
5V
(Note 5)
L
15V,
PP
; all other limits T
; all other limits T
(Continued)
= 2 k
±
±
15V, V
15V, V
OS
+14.2
−13.4
4
Typ
<
<
4.2
1.3
5.0
65
65
Typ
725
500
300
200
.
4.5
1.5
CM
CM
80
45
0.1
0.1
5
A
A
= 0, R
= 0, R
= T
= T
CM
J
J
= 2.5C, V
(Notes 4, 12)
= 25˚C.
= 25˚C. (Note 6)
(Notes 4, 12)
L
L
LM6165
LM6165
+13.5
+13.3
−13.0
−12.7
Limit
100 k
100 k
Limit
3.5
3.3
1.7
2.0
6.5
575
350
200
180
6.8
30
20
30
20
OUT
= 2.5V. Pin 1 & Pin 8 (V
and R
and R
S
S
LM6265
(Note 4)
LM6265
(Note 4)
= 50
= 50
+13.5
+13.3
−13.0
−12.8
Limit
Limit
575
200
3.5
3.3
1.7
1.9
6.5
6.7
30
25
30
25
unless otherwise noted.
unless otherwise noted.
OS
Adjust) are each connected
LM6365
(Note 4)
LM6365
(Note 4)
+13.4
+13.3
−12.9
−12.8
Limit
Limit
500
200
3.4
3.3
1.8
1.9
6.8
6.9
30
25
30
25
OS
, I
OS
Units
Units
MHz
MHz
Max
Max
V/µs
Deg
Deg
Min
Min
Min
Min
Min
Min
Min
, and
mA
mA
mA
ns
%
V
V
V
V