LM359N/NOPB National Semiconductor, LM359N/NOPB Datasheet - Page 3

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LM359N/NOPB

Manufacturer Part Number
LM359N/NOPB
Description
IC AMP DUAL PROG CUR MODE 14-DIP
Manufacturer
National Semiconductor
Datasheet

Specifications of LM359N/NOPB

Amplifier Type
General Purpose
Number Of Circuits
2
Slew Rate
60 V/µs
Gain Bandwidth Product
400MHz
Current - Input Bias
8µA
Current - Supply
18.5mA
Current - Output / Channel
40mA
Voltage - Supply, Single/dual (±)
5 V ~ 22 V, ±2.5 V ~ 11 V
Operating Temperature
0°C ~ 70°C
Mounting Type
Through Hole
Package / Case
14-DIP (0.300", 7.62mm)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Output Type
-
-3db Bandwidth
-
Voltage - Input Offset
-
Other names
*LM359N
*LM359N/NOPB
LM359
LM359N
Output Currents
Supply Current
Power Supply Rejection
(Note 4)
Electrical Characteristics
I
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
Note 2: See Maximum Power Dissipation graph.
Note 3: Mirror gain is the current gain of the current mirror which is used as the non-inverting input.
∆Mirror Gain is the % change in A
Note 4: See Supply Rejection graphs.
Typical Performance Characteristics
SET(IN)
Source
Sink (Linear Region)
Sink (Overdriven)
= I
Parameter
SET(OUT)
= 0.5 mA, V
Open Loop Gain
Open Loop Gain
I
for two different mirror currents at any given temperature.
I
V
I
V
Non-Inverting Input
Grounded, R
f = 120 Hz, I
supply
IN
IN
comp
OUT
(−) and I
(−) = 100 µA, I
−0.5V = V
Force = 1V
= 12V, T
IN
IN
(+) Grounded, R
(Continued)
L
(+) Grounded
=
A
00778839
00778841
OUT
= 25˚C unless otherwise noted
IN
Conditions
(+) = 0,
= 1V, I
IN
(+) = 0
L
= 100Ω
3
Note: Shaded area refers to LM359
Gain Bandwidth Product
Min
1.5
16
40
Open Loop Gain
LM359
18.5
Typ
4.7
40
50
3
Max
22
00778840
00778842
www.national.com
Units
mA
mA
mA
mA
dB

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