LM307N National Semiconductor, LM307N Datasheet - Page 3

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LM307N

Manufacturer Part Number
LM307N
Description
IC OP AMP GEN PUR COMPENSATED
Manufacturer
National Semiconductor
Datasheet

Specifications of LM307N

Amplifier Type
General Purpose
Number Of Circuits
1
Current - Input Bias
70nA
Voltage - Input Offset
2000µV
Current - Supply
1.8mA
Voltage - Supply, Single/dual (±)
±5 V ~ 15 V
Operating Temperature
0°C ~ 70°C
Mounting Type
Through Hole
Package / Case
8-DIP (0.300", 7.62mm)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Output Type
-
Current - Output / Channel
-
-3db Bandwidth
-
Slew Rate
-
Gain Bandwidth Product
-
Other names
*LM307N
LM307

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Large Signal Voltage
Gain
Output Voltage Swing
Input Voltage Range
Common Mode
Rejection Ratio
Supply Voltage
Rejection Ratio
Electrical Characteristics
Note 1 The maximum junction temperature of the LM107 is 150 C and the LM207 LM307 is 100 C For operating at elevated temperatures devices in the H08
package must be derated based on a thermal resistance of 165 C W junction to ambient or 30 C W junction to case The thermal resistance of the dual-in-line
package is 100 C W junction to ambient
Note 2 For supply voltages less than
Note 3 These specifications apply for
a
Note 4 Refer to RETS107X for LM107H and LM107J military specifications
Schematic Diagram
70 C and
Pin connections shown are for metal can
Parameter
g
5V
s
V
S s g
15V for the LM307 unless otherwise specified
V
R
V
R
R
V
V
R
R
S
L t
S
L
L
S
S
S s
S s
e
e
e
e
e
e
g
g
15V the absolute maximum input voltage is equal to the supply voltage
5V
2 k
10 k
2 k
50 k
50 k
g
g
g
g
15V V
15V
20V
15V
s
Conditions
V
S s
OUT
a
(Note 3) (Continued)
20V and
e
g
b
10V
55 C
s
T
A s
g
g
g
Min
25
80
80
12
10
15
3
a
LM107 LM207
125 C for the LM107 or
g
g
a
b
Typ
96
96
14
13
15
13
Max
b
25 C
s
g
g
g
Min
15
70
70
T
12
10
12
A
a
85 C for the LM207 and 0 C
LM307
g
g
a
b
Typ
90
96
14
13
15
13
Max
TL H 7757 – 1
s
V mV
Units
T
dB
dB
V
V
V
V
A s

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