EL5172ISZ-T7 Intersil, EL5172ISZ-T7 Datasheet - Page 9
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EL5172ISZ-T7
Manufacturer Part Number
EL5172ISZ-T7
Description
IC LINE RCVR SGL 250MHZ 8-SOIC
Manufacturer
Intersil
Datasheet
1.EL5172ISZ.pdf
(15 pages)
Specifications of EL5172ISZ-T7
Amplifier Type
Differential
Number Of Circuits
1
Slew Rate
800 V/µs
Gain Bandwidth Product
100MHz
-3db Bandwidth
250MHz
Current - Input Bias
6µA
Voltage - Input Offset
7000µV
Current - Supply
5.6mA
Current - Output / Channel
95mA
Voltage - Supply, Single/dual (±)
4.75 V ~ 11 V, ±2.38 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Output Type
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EL5172ISZ-T7
Manufacturer:
AD
Quantity:
2 390
Part Number:
EL5172ISZ-T7
Manufacturer:
INTERSIL
Quantity:
20 000
Typical Performance Curves
Simplified Schematic
FIGURE 21. PACKAGE POWER DISSIPATION vs AMBIENT
CH1
CH2
1.2
1.0
0.8
0.6
0.4
0.2
M = 100ns, CH1 = 200mV/DIV, CH2 = 5V/DIV
0
0
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
FIGURE 19. ENABLED RESPONSE
TEMPERATURE
870mW
625mW
486mW
θ
JA
25
AMBIENT TEMPERATURE (°C)
MSOP8
= +206°C/W
50
θ
100ns/DIV
JA
9
VIN+
QSOP24
= +115°C/W
75
Q
1
85
I
1
θ
JA
100
R
= +160°C/W
SOIC8
VIN-
D1
Q
I
(Continued)
2
2
125
V
FBP
S
+
Q
150
3
I
EL5172, EL5372
3
R
FBN
D2
Q
I
4
4
R
R
Q
25
3
1
7
FIGURE 22. PACKAGE POWER DISSIPATION vs AMBIENT
V
S
R
R
CH2
-
CH1
4
2
Q
1.4
1.2
1.0
0.8
0.6
0.4
0.2
M = 400ns, CH1 = 200mV/DIV, CH2 = 5V/DIV
9
Q
0
Q
V
0
8
B2
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
6
FIGURE 20. DISABLED RESPONSE
TEMPERATURE
909mW
870mW
1.136W
θ
V
JA
B1
25
MSOP8/10
= +115°C/W
AMBIENT TEMPERATURE (°C)
C
C
50
x1
θ
JA
QSOP24
400ns/DIV
= +88°C/W
75
V
OUT
θ
85
JA
= +110°C/W
SOIC8
100
125
September 14, 2010
150
FN7311.9