AD8061AR Analog Devices Inc, AD8061AR Datasheet - Page 6

IC OPAMP VF R-R LP 50MA 8SOIC

AD8061AR

Manufacturer Part Number
AD8061AR
Description
IC OPAMP VF R-R LP 50MA 8SOIC
Manufacturer
Analog Devices Inc
Datasheet

Specifications of AD8061AR

Rohs Status
RoHS non-compliant
Amplifier Type
Voltage Feedback
Number Of Circuits
1
Output Type
Rail-to-Rail
Slew Rate
650 V/µs
-3db Bandwidth
320MHz
Current - Input Bias
3.5µA
Voltage - Input Offset
1000µV
Current - Supply
6.8mA
Current - Output / Channel
50mA
Voltage - Supply, Single/dual (±)
2.7 V ~ 8 V, ±1.35 V ~ 4 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Gain Bandwidth Product
-

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AD8061/AD8062/AD8063
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Supply Voltage
Internal Power Dissipation
Input Voltage (Common-Mode)
Differential Input Voltage
Output Short-Circuit Duration
Storage Temperature Range
Operating Temperature Range
Lead Temperature (Soldering,
1
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Specification is for device in free air.
8-lead SOIC (R)
5-lead SOT-23 (RJ)
6-lead SOT-23 (RJ)
8-lead MSOP (RM)
R-8, RM-8, SOT-23-5, SOT-23-6
10 sec)
8-Lead SOIC_N: θ
5-Lead SOT-23: θ
6-Lead SOT-23: θ
8-Lead MSOP: θ
JA
JA
JA
JA
= 200°C/W; θ
= 240°C/W; θ
= 230°C/W; θ
= 160°C/W; θ
1
JC
JC
JC
JC
= 44°C/W.
= 92°C/W.
= 92°C/W.
= 56°C/W.
Rating
8 V
0.8 W
0.5 W
0.5 W
0.6 W
(−V
±V
Observe power derating curves
−65°C to +125°C
−40°C to +85°C
300°C
S
S
− 0.2 V) to (+V
S
+ 0.2 V)
Rev. G | Page 6 of 20
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8061/AD8062/AD8063 is limited by the associated rise in
junction temperature. The maximum safe junction temperature
for plastic encapsulated devices is determined by the glass
transition temperature of the plastic, approximately 150°C.
Temporarily exceeding this limit may cause a shift in parametric
performance due to a change in the stresses exerted on the die
by the package. Exceeding a junction temperature of 175°C for
an extended period can result in device failure. While the
AD8061/AD8062/AD8063 is internally short-circuit protected,
this may not be sufficient to guarantee that the maximum
junction temperature (150°C) is not exceeded under all
conditions.
To ensure proper operation, it is necessary to observe the
maximum power derating curves.
ESD CAUTION
Figure 6. Maximum Power Dissipation vs. Temperature for
2.0
1.5
1.0
0.5
0
–50 –40 –30
8-LEAD SOIC
PACKAGE
MSOP
–20
AD8061/AD8062/AD8063
–10
AMBIENT TEMPERATURE (°C)
SOT-23-5, SOT-23-6
0
10
20
30
40
T
50
J
= 150°C
60
70 80
90

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