MCP6271T-E/SN Microchip Technology, MCP6271T-E/SN Datasheet - Page 4

• Manufacturer Part Number: MCP6271T-E/SN
• Description: IC OPAMP 2.0V SNGL R-R 8SOIC
• Manufacturer: Microchip Technology

Specifications of MCP6271T-E/SN

• Amplifier Type: General Purpose
• Number Of Circuits: 1
• Output Type: Rail-to-Rail
• Slew Rate: 0.9 V/µs
• Gain Bandwidth Product: 2MHz
• Current - Input Bias: 1pA
• Voltage - Input Offset: 3000µV
• Current - Supply: 170µA
• Current - Output / Channel: 25mA
• Voltage - Supply, Single/dual (±): 2 V ~ 6 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• For Use With: MCP6XXXDM-FLTR - KIT DEMO BOARD ACTIVE FILTER
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• -3db Bandwidth: -

MCP6271/1R/2/3/4/5
TEMPERATURE SPECIFICATIONS
MCP6273/MCP6275 CHIP SELECT SPECIFICATIONS
DS21810F-page 4
Electrical Characteristics: Unless otherwise indicated, V
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-SOT-23
Thermal Resistance, 6L-SOT-23
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
Thermal Resistance, 8L-MSOP
Thermal Resistance, 14L-PDIP
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
Electrical Characteristics: Unless otherwise indicated, T
V
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
CS Logic Threshold, High
CS Input Current, High
GND Current per Amplifier
Amplifier Output Leakage
Dynamic Specifications (Note 1)
CS Low to Valid Amplifier
Output, Turn on Time
CS High to Amplifier Output
High-Z
Hysteresis
Note 1:
Note:
CM
= V
DD
Parameters
The input condition (V
specification is tested at the output of op amp B (V
The Junction Temperature (T
/2, V
Parameters
OUT
≈ V
DD
/2, V
L
= V
IN
) specified applies to both op amp A and B of the MCP6275. The dynamic
V
DD
Sym
I
t
I
V
t
HYST
V
CSH
I
OFF
CSL
—
ON
SS
/2, R
IH
IL
J
) must not exceed the Absolute Maximum specification of +150°C.
L
Sym
= 10 kΩ to V
θ
θ
θ
θ
θ
θ
θ
θ
T
T
T
0.8V
JA
JA
JA
JA
JA
JA
JA
JA
A
A
A
V
Min
—
—
—
—
—
—
—
SS
DD
Min
–40
–40
–65
—
—
—
—
—
—
—
—
0.01
–0.7
0.01
0.01
DD
A
Typ
0.7
0.6
DD
—
—
4
= +25°C, V
/2, C
= +2.0V to +5.5V and V
OUTB
L
0.2V
Typ
256
230
163
206
120
100
).
= 60 pF and CS is tied low.
85
70
—
—
—
V
Max
10
—
—
—
—
—
2
DD
DD
DD
= +2.0V to +5.5V, V
+125
+125
+150
Max
Units
—
—
—
—
—
—
—
—
µA
µA
µA
µA
µs
µs
V
V
V
SS
CS = V
CS = V
CS = V
CS = V
CS Low ≤ 0.2 V
V
V
CS High ≥ 0.8 V
V
V
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
IN
DD
IN
DD
© 2008 Microchip Technology Inc.
°C
°C
°C
= GND.
= V
= V
= 5.0V
= 5V
SS
DD
DD
DD
DD
DD
SS
Note
Conditions
/2, V
/2, V
= GND,
Conditions
OUT
OUT
DD
DD
, G = +1 V/V,
, G = +1 V/V,
= 0.9 V
= 0.1 V
DD
DD
/2,
/2