MCP6143T-E/CH Microchip Technology, MCP6143T-E/CH Datasheet - Page 4
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MCP6143T-E/CH
Manufacturer Part Number
MCP6143T-E/CH
Description
IC OPAMP 1.4V SNGL R-R SOT23-6
Manufacturer
Microchip Technology
Datasheet
1.MCP6142-ESN.pdf
(38 pages)
Specifications of MCP6143T-E/CH
Slew Rate
0.003 V/µs
Amplifier Type
General Purpose
Number Of Circuits
1
Output Type
Rail-to-Rail
Gain Bandwidth Product
100kHz
Current - Input Bias
1pA
Voltage - Input Offset
3000µV
Current - Supply
0.6µA
Current - Output / Channel
20mA
Voltage - Supply, Single/dual (±)
1.4 V ~ 6 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
SOT-23-6
Op Amp Type
Rail To Rail
No. Of Amplifiers
1
Bandwidth
100kHz
Supply Voltage Range
1.4V To 6V
Amplifier Case Style
SOT-23
No. Of Pins
6
Number Of Channels
1
Voltage Gain Db
115 dB
Common Mode Rejection Ratio (min)
60 dB
Input Offset Voltage
3 mV
Operating Supply Voltage
3 V, 5 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
-3db Bandwidth
-
Lead Free Status / Rohs Status
Details
Other names
MCP6143T-E/CH
MCP6143T-E/CHTR
MCP6143T-E/CHTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCP6143T-E/CH
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
MCP6141/2/3/4
AC ELECTRICAL CHARACTERISTICS
MCP6143 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS
FIGURE 1-1:
Diagram (MCP6143 only).
DS21668D-page 4
Electrical Characteristics: Unless otherwise indicated, V
V
AC Response
Gain Bandwidth Product
Slew Rate
Phase Margin
Noise
Input Voltage Noise
Input Voltage Noise Density
Input Current Noise Density
Electrical Characteristics: Unless otherwise indicated, V
V
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
CS Logic Threshold, High
CS Input Current, High
CS Input High, GND Current
Amplifier Output Leakage, CS High
Dynamic Specifications
CS Low to Amplifier Output Turn-on Time
CS High to Amplifier Output High-Z
Hysteresis
V
OUT
OUT
OUT
CS
I
I
CS
SS
≈ V
≈ V
High-Z
-20 pA
(typical)
5 pA (typical)
DD
DD
/2, V
/2, V
Parameters
Parameters
L
L
= V
= V
V
t
IL
ON
DD
DD
/2, R
/2, R
Chip Select (CS) Timing
(typical)
L
L
-0.6 µA
= 1 MΩ to V
= 1 MΩ to V
L
L
V
, C
, and C
5 pA (typical)
I
V
IH
OLEAK
Sym
I
I
t
V
t
HYST
V
CSH
I
OFF
t
CSL
L
GBWP
ON
SS
OFF
(typical)
Sym
IH
IL
= 60 pF and CS is tied low (refer to
-20 pA
PM
SR
E
e
i
ni
ni
ni
High-Z
L
= 60 pF (refer to
V
DD
V
Min
Min
—
—
—
—
—
—
—
SS
—
—
—
—
—
—
DD
DD
–0.3
= +1.4V to +5.5V, V
= +1.4V to +5.5V, V
Typ
100
170
5.0
0.6
Typ
24
60
-20
0.6
20
10
—
—
5
5
2
Figure 1-2
Max
V
—
—
—
—
—
—
SS
Max
V
50
—
—
—
—
—
—
DD
+0.3
and
SS
SS
nV/√Hz f = 1 kHz
fA/√Hz f = 1 kHz
Units
µV
Figure 1-2
V/ms
= GND, T
= GND, T
kHz
Figure
°
P-P
Units
ms
pA
pA
pA
pA
µs
V
V
V
G = +10 V/V
f = 0.1 Hz to 10 Hz
1-3).
A
A
and
= +25°C, V
= +25°C, V
CS = V
CS = V
CS = V
CS = V
G = +1 V/V, CS = 0.3V to
V
G = +1 V/V, CS = V
V
V
OUT
OUT
DD
© 2009 Microchip Technology Inc.
Figure
= 5.0V
= 0.9V
= 0.1V
SS
DD
DD
DD
Conditions
1-3).
CM
CM
Conditions
DD
DD
= V
= V
/2
/2
DD
DD
DD
/2,
/2,
–0.3V to