LF411ACN/NOPB National Semiconductor, LF411ACN/NOPB Datasheet - Page 2

• Manufacturer Part Number: LF411ACN/NOPB
• Description: IC OP AMP LOW JFET INPUT 8-DIP
• Manufacturer: National Semiconductor
• Series: BI-FET II™r

Specifications of LF411ACN/NOPB

• Amplifier Type: J-FET
• Number Of Circuits: 1
• Slew Rate: 15 V/µs
• Gain Bandwidth Product: 4MHz
• Current - Input Bias: 50pA
• Voltage - Input Offset: 300µV
• Current - Supply: 1.8mA
• Voltage - Supply, Single/dual (±): 10 V ~ 44 V, ±5 V ~ 22 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Bandwidth: 4 MHz
• Common Mode Rejection Ratio: 100
• Current, Input Bias: 50 pA
• Current, Input Offset: 25 pA
• Current, Output: 25 mA
• Current, Supply: 1.8 mA
• Harmonic Distortion: 0.02 %
• Impedance, Thermal: 162 °C/W
• Number Of Amplifiers: Single
• Package Type: MDIP-8
• Power Dissipation: 670 mW
• Resistance, Input: 10^12 Ohms
• Temperature, Operating, Range: 0 to +70 °C
• Voltage, Gain: 200 V/mV
• Voltage, Input: 10 to 44 V
• Voltage, Noise: 25 nV/sqrt Hz
• Voltage, Offset: 0.3 mV
• Voltage, Output, High: 13.5 V
• Voltage, Output, Low: -13.5 V
• Voltage, Supply: ±19 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Output Type: -
• Current - Output / Channel: -
• -3db Bandwidth: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: *LF411ACN; *LF411ACN/NOPB; LF411ACN

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V
∆V
I
I
R
A
V
V
CMRR
PSRR
I
SR
GBW
e
i
n
OS
B
S
Symbol
Symbol
n
OS
IN
VOL
O
CM
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
DC Electrical Characteristics
AC Electrical Characteristic
OS
Power Dissipation
Supply Voltage
Differential Input Voltage
Input Voltage Range
Output Short Circuit
(Notes 3, 10)
/∆T Average TC of Input
(Note 2)
Duration
Slew Rate
Gain-Bandwidth Product
Equivalent Input Noise Voltage
Equivalent Input Noise Current
Input Offset Voltage
Offset Voltage
Input Offset Current
Input Bias Current
Input Resistance
Large Signal Voltage
Gain
Output Voltage Swing
Input Common-Mode
Voltage Range
Common-Mode
Rejection Ratio
Supply Voltage
Rejection Ratio
Supply Current
Parameter
Parameter
H Package
670 mW
Continuous Continuous
LF411A
R
R
V
(Notes 5, 7)
V
(Notes 5, 7)
T
V
R
Over Temperature
V
R
(Note 8)
±
±
±
j
S
S
S
S
S
S
=25˚C
L
S
22V
38V
19V
=
=
=
=2k, T
=
=10 kΩ, T
=10 kΩ (Note 6)
≤10k
±
±
±
±
15V
15V
15V, V
15V, R
V
V
T
f=1 kHz
T
A
N Package
A
A
=25˚C
S
S
670 mW
Conditions
=25˚C, R
=25˚C, f=1 kHz
=
=
(Note 1)
(Note 5)
LF411
O
L
±
±
±
±
±
A
=10k
(Note 5)
=
=25˚C
18V
30V
15V
15V, T
15V, T
±
Conditions
10V,
S
A
A
=100Ω,
=25˚C
=25˚C
T
T
T
T
T
T
j
j
j
j
j
j
=25˚C
=70˚C
=125˚C
=25˚C
=70˚C
=125˚C
2
T
θ
θ
Operating Temp.
Storage Temp.
Lead Temp.
ESD Tolerance
j
j
j
A
C
max
Range
Range
(Soldering,
10 sec.)
Min
±
±
Min
50
25
80
80
10
12
16
3
LF411A
LF411A
±
+19.5
−16.5
10
Typ
0.01
200
200
100
100
Typ
0.3
1.8
13.5
25
50
15
25
7
4
12
Max
100
200
Max
0.5
2.8
10
25
50
2
4
162˚C/W (Still Air)
−65˚C≤T
65˚C/W (400
H Package
Min
±
±
Air Flow)
(Note 4)
25
15
70
70
20˚C/W
Min
LF/min
12
11
2.7
150˚C
260˚C
8
A
≤150˚C −65˚C≤T
±
+14.5
−11.5
Rating to be determined.
10
Typ
LF411
200
200
100
100
0.8
1.8
13.5
25
50
0.01
Typ
7
LF411
15
25
12
4
(Note 6)
Max
N Package
Max
100
200
2.0
3.4
20
25
50
120˚C/W
(Note 4)
2
4
115˚C
260˚C
A
≤150˚C
Units
MHz
V/µs
Units
µV/˚C
V/mV
V/mV
mV
mA
pA
nA
nA
pA
nA
nA
dB
dB
Ω
V
V
V