CA3140AEZ Intersil, CA3140AEZ Datasheet - Page 9

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CA3140AEZ

Manufacturer Part Number
CA3140AEZ
Description
IC OPAMP BIMOS 4.5MHZ 8DIP
Manufacturer
Intersil
Datasheets

Specifications of CA3140AEZ

Amplifier Type
General Purpose
Number Of Circuits
1
Slew Rate
9 V/µs
Gain Bandwidth Product
4.5MHz
Current - Input Bias
10pA
Voltage - Input Offset
2000µV
Current - Supply
4mA
Current - Output / Channel
40mA
Voltage - Supply, Single/dual (±)
4 V ~ 36 V, ±2 V ~ 18 V
Operating Temperature
-55°C ~ 125°C
Mounting Type
Through Hole
Package / Case
8-DIP (0.300", 7.62mm)
Bandwidth
4.5 MHz
Common Mode Rejection Ratio
90
Current, Input Bias
0.00001 μA
Current, Input Offset
0.5 pA
Current, Output
40 mA
Current, Supply
4 mA
Number Of Amplifiers
Single
Package Type
PDIP-8
Power Dissipation
120 mW
Resistance, Input
1.5 Teraohms
Temperature, Operating, Range
-55 to +125 °C
Time, Rise
0.08 μs
Voltage, Gain
100 kV/V
Voltage, Input
8 V
Voltage, Noise
12 nV/sqrt Hz
Voltage, Offset
2 mV
Voltage, Output, High
13 V
Voltage, Output, Low
-14.4 V
Voltage, Supply
4 to 36 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Output Type
-
-3db Bandwidth
-
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CA3140AEZ
Manufacturer:
Intersil
Quantity:
15 150
the CA3140 is used as a unity gain voltage follower. This
resistance prevents the possibility of extremely large input
signal transients from forcing a signal through the input
protection network and directly driving the internal constant
current source which could result in positive feedback via the
output terminal. A 3.9kΩ resistor is sufficient.
The typical input current is on the order of 10pA when the
inputs are centered at nominal device dissipation. As the
output supplies load current, device dissipation will increase,
raising the chip temperature and resulting in increased input
current. Figure 7 shows typical input terminal current versus
ambient temperature for the CA3140.
It is well known that MOSFET devices can exhibit slight
changes in characteristics (for example, small changes in
FIGURE 6. OPEN LOOP VOLTAGE GAIN AND PHASE vs
100
80
60
40
20
0
10
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
SUPPLY VOLTAGE: V
T
1
A
FIGURE 8. OUTPUT VOLTAGE SWING CAPABILITY AND COMMON MODE INPUT VOLTAGE RANGE vs SUPPLY VOLTAGE
0
= 25
0
R
10
+V
+V
+V
L
o
FREQUENCY
2
ICR
C
=
ICR
ICR
AT T
AT T
AT T
10
5
3
A
A
A
FREQUENCY (Hz)
= 125
= -55
= 25
SUPPLY VOLTAGE (V+, V-)
S
10
= ±15V
4
o
o
o
C
C
C
10
9
R
C
10
L
L
5
= 2kΩ,
= 100pF
φOL
10
15
6
+V
+V
+V
R
C
OUT
OUT
OUT
L
L
10
= 2kΩ,
= 0pF
7
AT T
AT T
AT T
20
A
A
A
10
= 125
= 25
= -55
CA3140, CA3140A
-75
-90
-105
-120
-135
-150
8
o
o
o
C
C
C
25
input offset voltage) due to the application of large
differential input voltages that are sustained over long
periods at elevated temperatures.
Both applied voltage and temperature accelerate these
changes. The process is reversible and offset voltage shifts of
the opposite polarity reverse the offset. Figure 9 shows the
typical offset voltage change as a function of various stress
voltages at the maximum rating of 125
lower temperatures (metal can and plastic), for example, at
85
linear applications, where the differential voltage is small and
symmetrical, these incremental changes are of about the
same magnitude as those encountered in an operational
amplifier employing a bipolar transistor input stage.
o
C, this change in voltage is considerably less. In typical
10K
100
-0.5
-1.0
-1.5
1K
10
1.5
1.0
0.5
1
FIGURE 7. INPUT CURRENT vs TEMPERATURE
-60
0
0
SUPPLY VOLTAGE: V
-40
-V
T
A
OUT
= -55
-20
FOR
5
o
C to 125
0
SUPPLY VOLTAGE (V+, V-)
TEMPERATURE (
o
C
S
20
10
= ±15V
40
o
60
15
C (for metal can); at
o
-V
-V
-V
C)
ICR
ICR
ICR
80
AT T
AT T
AT T
100
20
A
A
A
= 125
= 25
= -55
July 11, 2005
120
FN957.10
o
o
o
C
C
C
140
25

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