LF356N/NOPB National Semiconductor, LF356N/NOPB Datasheet

LF356N/NOPB

Manufacturer Part Number

LF356N/NOPB

Description

IC OP AMP MONO WB JFET IN 8-DIP

Manufacturer

National Semiconductor

Series

BI-FET™r

Datasheets

1.LF356MNOPB.pdf (23 pages)

2.LF356NNOPB.pdf (5 pages)

Specifications of LF356N/NOPB

Amplifier Type

J-FET

Number Of Circuits

Slew Rate

12 V/µs

Gain Bandwidth Product

5MHz

Current - Input Bias

30pA

Voltage - Input Offset

3000µV

Current - Supply

5mA

Voltage - Supply, Single/dual (±)

10 V ~ 36 V, ±5 V ~ 18 V

Operating Temperature

0°C ~ 70°C

Mounting Type

Through Hole

Package / Case

8-DIP (0.300", 7.62mm)

Bandwidth

5 MHz

Common Mode Rejection Ratio

Current, Input Bias

30 pA

Current, Input Offset

3 pA

Current, Output

25 mA

Current, Supply

5 mA

Impedance, Thermal

130 °C/W

Number Of Amplifiers

Single

Package Type

MDIP-8

Power Dissipation

670 mW

Resistance, Input

10^12 Ohms

Temperature, Operating, Range

0 to +70 °C

Voltage, Gain

200 V/mV

Voltage, Input

10 to 36 V

Voltage, Noise

12 nV/sqrt Hz

Voltage, Offset

3 mV

Voltage, Output, High

13 V

Voltage, Output, Low

-13 V

Voltage, Supply

±16 V

Number Of Channels

Voltage Gain Db

106.02 dB

Common Mode Rejection Ratio (min)

80 dB

Input Voltage Range (max)

36 V

Input Voltage Range (min)

10 V

Input Offset Voltage

10 mV at +/- 15 V

Supply Current

10 mA at +/- 15 V

Maximum Power Dissipation

670 mW

Maximum Operating Temperature

+ 70 C

Mounting Style

Through Hole

Maximum Dual Supply Voltage

+/- 18 V

Minimum Operating Temperature

0 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Output Type

Current - Output / Channel

-3db Bandwidth

Lead Free Status / Rohs Status

RoHS Compliant part Electrostatic Device

Other names

*LF356N
LF356
LF356N

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

LF356N/NOPB

Manufacturer:

C&D

Quantity:

1 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

LF356N/NOPB

Current page: 1 of 5
Download datasheet (147Kb)

LF155/LF156/LF256/LF257/LF355/LF356/LF357

JFET Input Operational Amplifiers

General Description

These are the first monolithic JFET input operational ampli-

fiers to incorporate well matched, high voltage JFETs on the

same chip with standard bipolar transistors (BI-FET

nology). These amplifiers feature low input bias and offset

currents/low offset voltage and offset voltage drift, coupled

with offset adjust which does not degrade drift or

common-mode rejection. The devices are also designed for

high slew rate, wide bandwidth, extremely fast settling time,

low voltage and current noise and a low 1/f noise corner.

Features

Advantages

n Replace expensive hybrid and module FET op amps

n Rugged JFETs allow blow-out free handling compared

n Excellent for low noise applications using either high or

n Offset adjust does not degrade drift or common-mode

n New output stage allows use of large capacitive loads

n Internal compensation and large differential input voltage

Applications

n Precision high speed integrators

n Fast D/A and A/D converters

n High impedance buffers

n Wideband, low noise, low drift amplifiers

Simplified Schematic

BI-FET

3pF in LF357 series.

with MOSFET input devices

low source impedance — very low 1/f corner

rejection as in most monolithic amplifiers

(5,000 pF) without stability problems

capability

™

, BI-FET II

™

are trademarks of National Semiconductor Corporation.

DS005646

™

Tech-

n Logarithmic amplifiers

n Photocell amplifiers

n Sample and Hold circuits

Common Features

n Low input bias current:

n Low Input Offset Current: 3pA

n High input impedance: 10

n Low input noise current:

n High common-mode rejection ratio: 100 dB

n Large dc voltage gain: 106 dB

Uncommon Features

Extremely

fast settling

time to

0.01%

Fast slew

rate

Wide gain

bandwidth

Low input

noise

voltage

LF155/

LF355

2.5

30pA

LF156/

LF256/

00564601

LF356

1.5

LF257/

LF357

1.5

=5)

Units

V/µs

MHz

µs

Related parts for LF356N/NOPB

LF356N/NOPB Summary of contents

Page 1

... Wideband, low noise, low drift amplifiers Simplified Schematic * 3pF in LF357 series. BI-FET ™ , BI-FET II ™ are trademarks of National Semiconductor Corporation. © 2001 National Semiconductor Corporation n Logarithmic amplifiers n Photocell amplifiers n Sample and Hold circuits Common Features ™ Tech- n Low input bias current: ...

Page 2

... Absolute Maximum Ratings If Military/Aerospace specified devices are required, contact the National Semiconductor Sales Office/Distributors for availability and specifications. Supply Voltage Differential Input Voltage Input Voltage Range (Note 2) Output Short Circuit Duration T JMAX H-Package N-Package M-Package Power Dissipation 25˚C (Notes H-Package (Still Air) ...

Page 3

DC Electrical Characteristics (Note 3) Symbol Parameter I Input Bias Current B R Input Resistance IN A Large Signal Voltage VOL Gain V Output Voltage Swing O V Input Common-Mode CM Voltage Range CMRR Common-Mode Rejection Ratio PSRR Supply Voltage ...

Page 4

Physical Dimensions inches (millimeters) unless otherwise noted Order Number LF155H, LF156H, LF256H, LF257H, LF356BH, LF356H or LF357H Metal Can Package (H) NS Package Number H08C Small Outline Package (M) Order Number LF356M or LF356MX NS Package Number M08A 22 ...

Page 5

... NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant ...

Related keywords

lf356
lf356m
lf356n
lf356h
LF356N/NOPB datasheet
LF356N/NOPB data sheet
LF356N/NOPB pdf datasheet
LF356N/NOPB component
LF356N/NOPB part
LF356N/NOPB distributor
LF356N/NOPB RoHS
LF356N/NOPB datasheet download