LM358M/NOPB National Semiconductor, LM358M/NOPB Datasheet

IC OP AMP DUAL LO/PWR 8-SOIC SMD

LM358M/NOPB

Manufacturer Part Number
LM358M/NOPB
Description
IC OP AMP DUAL LO/PWR 8-SOIC SMD
Manufacturer
National Semiconductor
Datasheets

Specifications of LM358M/NOPB

Amplifier Type
General Purpose
Number Of Circuits
2
Slew Rate
0.1 V/µs
Gain Bandwidth Product
1MHz
Current - Input Bias
45nA
Voltage - Input Offset
2000µV
Current - Supply
1mA
Current - Output / Channel
40mA
Voltage - Supply, Single/dual (±)
3 V ~ 32 V, ±1.5 V ~ 16 V
Operating Temperature
0°C ~ 70°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Bandwidth
1 MHz
Channel Separation
-120
Common Mode Rejection Ratio
85
Current, Input Bias
45 nA
Current, Input Offset
5 nA
Current, Output
40 mA
Current, Supply
0.5 mA
Impedance, Thermal
189 °C/W
Number Of Amplifiers
Dual
Package Type
SO-8
Power Dissipation
530 mW
Temperature, Operating, Range
0 to +70 °C
Voltage, Gain
100 V/mV
Voltage, Input
-0.3 to +32 V
Voltage, Offset
2 mV
Voltage, Output, High
28 V
Voltage, Output, Low
5 mV
Voltage, Supply
5 V
Dc
11+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Output Type
-
-3db Bandwidth
-
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Other names
*LM358M
*LM358M/NOPB
LM358MNS

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© 2005 National Semiconductor Corporation
LM158/LM258/LM358/LM2904
Low Power Dual Operational Amplifiers
General Description
The LM158 series consists of two independent, high gain,
internally frequency compensated operational amplifiers
which were designed specifically to operate from a single
power supply over a wide range of voltages. Operation from
split power supplies is also possible and the low power
supply current drain is independent of the magnitude of the
power supply voltage.
Application areas include transducer amplifiers, dc gain
blocks and all the conventional op amp circuits which now
can be more easily implemented in single power supply
systems. For example, the LM158 series can be directly
operated off of the standard +5V power supply voltage which
is used in digital systems and will easily provide the required
interface electronics without requiring the additional
power supplies.
The LM358 and LM2904 are available in a chip sized pack-
age (8-Bump micro SMD) using National’s micro SMD pack-
age technology.
Unique Characteristics
n In the linear mode the input common-mode voltage
n The unity gain cross frequency is temperature
n The input bias current is also temperature compensated.
Voltage Controlled Oscillator (VCO)
range includes ground and the output voltage can also
swing to ground, even though operated from only a
single power supply voltage.
compensated.
DS007787
±
15V
Advantages
n Two internally compensated op amps
n Eliminates need for dual supplies
n Allows direct sensing near GND and V
n Compatible with all forms of logic
n Power drain suitable for battery operation
Features
n Available in 8-Bump micro SMD chip sized package,
n Internally frequency compensated for unity gain
n Large dc voltage gain: 100 dB
n Wide bandwidth (unity gain): 1 MHz
n Wide power supply range:
n Very low supply current drain (500 µA) — essentially
n Low input offset voltage: 2 mV
n Input common-mode voltage range includes ground
n Differential input voltage range equal to the power
n Large output voltage swing
GND
(See AN-1112)
(temperature compensated)
independent of supply voltage
supply voltage
— Single supply: 3V to 32V
— or dual supplies:
±
1.5V to
00778723
±
16V
OUT
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LM358M/NOPB Summary of contents

Page 1

... The unity gain cross frequency is temperature compensated. n The input bias current is also temperature compensated. Voltage Controlled Oscillator (VCO) © 2005 National Semiconductor Corporation Advantages n Two internally compensated op amps n Eliminates need for dual supplies n Allows direct sensing near GND and V ...

Page 2

... Absolute Maximum Ratings If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ + Supply Voltage, V Differential Input Voltage Input Voltage Power Dissipation (Note 1) Molded DIP Metal Can Small Outline Package (M) micro SMD Output Short-Circuit to GND (One Amplifier) (Note 2) ≤ 15V and T ...

Page 3

Electrical Characteristics + V = +5.0V, unless otherwise stated Parameter Input Offset Voltage (Note Input Bias Current IN(+) IN(− 0V, (Note 6) CM Input Offset Current I − I IN(+) IN(−) + ...

Page 4

Electrical Characteristics + V = +5.0V, (Note 4), unless otherwise stated Parameter + Large Signal Voltage V = +15V Gain ( 11V) O ≥ 2 kΩ Output +30V OH + Voltage ...

Page 5

Electrical Characteristics + V = +5.0V, (Note 4), unless otherwise stated Parameter + Large Signal Voltage V = +15V Gain ( 11V) O ≥ 2 kΩ Output +30V OH Voltage (LM2904, ...

Page 6

Ordering Information Package −55˚C to 125˚C SO-8 8-Pin Molded DIP 8-Pin Ceramic DIP LM158AJ/883(Note 11) LM158J/883(Note 11) LM158J LM158AJLQML(Note 12) LM158AJQMLV(Note 12) TO-5, 8-Pin Metal LM158AH/883(Note 11) Can LM158H/883(Note 11) LM158AH LM158H LM158AHLQML(Note 12) LM158AHLQMLV(Note 12) 8-Bump micro SMD 8-Bump ...

Page 7

Physical Dimensions inches (millimeters) unless otherwise noted (Continued) SOIC Package (M) NS Package Number M08A Molded Dip Package (N) NS Package Number N08E 22 ...

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