AD8032ARZ Analog Devices Inc, AD8032ARZ Datasheet - Page 6

• Manufacturer Part Number: AD8032ARZ
• Description: IC OPAMP VF R-R DUAL LP 8SOIC
• Manufacturer: Analog Devices Inc

Specifications of AD8032ARZ

• Slew Rate: 35 V/µs
• Amplifier Type: Voltage Feedback
• Number Of Circuits: 2
• Output Type: Rail-to-Rail
• -3db Bandwidth: 80MHz
• Current - Input Bias: 450nA
• Voltage - Input Offset: 1000µV
• Current - Supply: 900µA
• Current - Output / Channel: 15mA
• Voltage - Supply, Single/dual (±): 2.7 V ~ 12 V, ±1.35 V ~ 6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Op Amp Type: High Speed
• No. Of Amplifiers: 2
• Bandwidth: 80MHz
• Supply Voltage Range: 2.7V To 12V
• Amplifier Case Style: SOIC
• No. Of Pins: 8
• Operating Temperature Range: -40°C To +85°C
• Common Mode Rejection Ratio: 80
• Current, Input Bias: 0.45 μA
• Current, Input Offset: 50 nA
• Current, Output: 15 mA
• Current, Supply: 800 μA
• Harmonic Distortion: -62 dBc
• Impedance, Thermal: 155 °C/W
• Number Of Amplifiers: Dual
• Package Type: SOIC-8
• Power Dissipation: 0.8 W
• Resistance, Input: 280 Kilohms (Differential), 40 Megohms (Common-Mode)
• Temperature, Operating, Range: -40 to +85 °C
• Voltage, Input: -5.5 to +5.5 V
• Voltage, Noise: 15 nV/sqrt Hz
• Voltage, Offset: ±1 mV
• Voltage, Output, High: +4.98 V
• Voltage, Output, Low: -4.98 V
• Voltage, Supply: ±5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain Bandwidth Product: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

AD8031/AD8032
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Supply Voltage
Internal Power Dissipation
Input Voltage (Common Mode)
Differential Input Voltage
Output Short-Circuit Duration
Storage Temperature Range (N, R, RM, RJ)
Lead Temperature (Soldering 10 sec)
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
1
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Specification is for the device in free air:
8-Lead PDIP: θ
8-Lead SOIC_N: θ
8-Lead MSOP: θ
5-Lead SOT-23: θ
8-Lead PDIP (N)
8-Lead SOIC_N (R)
8-Lead MSOP (RM)
5-Lead SOT-23 (RJ)
JA
JA
= 90°C/W.
JA
JA
= 200°C/W.
= 240°C/W.
= 155°C/W.
1
Rating
12.6 V
1.3 W
0.8 W
0.6 W
0.5 W
±V
±3.4 V
Observe Power
Derating Curves
−65°C to +125°C
300°C
S
± 0.5 V
Rev. D | Page 6 of 20
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8031/AD8032 is limited by the associated rise in junction
temperature. The maximum safe junction temperature for
plastic encapsulated devices is determined by the glass
transition temperature of the plastic, approximately 150°C.
Exceeding this limit temporarily can cause a shift in parametric
performance due to a change in the stresses exerted on the die
by the package. Exceeding a junction temperature of 175°C for
an extended period can result in device failure.
While the AD8031/AD8032 are internally short-circuit
protected, this may not be sufficient to guarantee that the
maximum junction temperature (150°C) is not exceeded under
all conditions. To ensure proper operation, it is necessary to
observe the maximum power derating curves shown in Figure 7.
2.0
1.5
1.0
0.5
0
–50 –40 –30 –20 –10
Figure 7. Maximum Power Dissipation vs. Temperature
8-LEAD MSOP
5-LEAD SOT-23
AMBIENT TEMPERATURE (°C)
0
8-LEAD PDIP
10 20 30 40 50 60 70 80 90
8-LEAD SOIC
T
J
= +150°C