AD8655ARZ Analog Devices Inc, AD8655ARZ Datasheet - Page 12

IC OPAMP GP R-R CMOS 28MHZ 8SOIC

AD8655ARZ

Manufacturer Part Number
AD8655ARZ
Description
IC OPAMP GP R-R CMOS 28MHZ 8SOIC
Manufacturer
Analog Devices Inc
Series
DigiTrim®r
Datasheets

Specifications of AD8655ARZ

Slew Rate
11 V/µs
Design Resources
Single Supply Low Noise LED Current Source Driver Using a Current Output DAC in the Reverse Mode (CN0139)
Amplifier Type
General Purpose
Number Of Circuits
1
Output Type
Rail-to-Rail
Gain Bandwidth Product
28MHz
Current - Input Bias
1pA
Voltage - Input Offset
50µV
Current - Supply
3.7mA
Current - Output / Channel
220mA
Voltage - Supply, Single/dual (±)
2.7 V ~ 5.5 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Op Amp Type
Precision
No. Of Amplifiers
1
Bandwidth
28MHz
Supply Voltage Range
2.7V To 5.5V
Amplifier Case Style
SOIC
No. Of Pins
8
Common Mode Rejection Ratio
120
Current, Input Bias
3.3 μA
Current, Input Offset
25 nA
Current, Output
50 mA
Current, Supply
7.5 mA
Harmonic Distortion
-78 dB
Impedance, Thermal
155 °C/W
Number Of Amplifiers
Dual
Package Type
SOIC-8
Resistance, Input
300 Kilohms
Temperature, Operating, Range
-40 to +85 °C
Voltage, Input
-13.4 to +14.3 V (Common-Mode)
Voltage, Noise
15 nV/sqrt Hz
Voltage, Offset
0.5 mV
Voltage, Output, High
+13.7 V
Voltage, Output, Low
-13.7 V
Voltage, Supply
±15 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
-3db Bandwidth
-
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device

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AD8655/AD8656
2
2
2
T
V
C
GAIN = +1
S
L
= ±1.35V
= 50pF
Figure 42. Large Signal Response
Figure 43. Small Signal Response
Figure 41. No Phase Reversal
V
V
IN
OUT
TIME (10μs/DIV)
T
TIME (1μs/DIV)
20 μ s/DIV
V
C
GAIN = +1
T
S
L
V
G = +1
C
S
L
= ±1.35V
= 100pF
= ±1.35V
= 50pF
Rev. A | Page 12 of 20
–200mV
200mV
–1.35V
0V
0V
0V
0V
1.35V
35
30
25
20
15
10
5
0
1
2
1
2
Figure 44. Small Signal Overshoot vs. Load Capacitance
0
V
V
S
IN
Figure 45. Negative Overload Recovery Time
= ±1.35V
T
Figure 46. Positive Overload Recovery Time
= 200mV
T
50
V
IN
V
OUT
V
V
OUT
100
IN
–OS
CAPACITANCE (pF)
150
400ns/DIV
400ns/DIV
+OS
200
V
V
GAIN = –10
RECOVERY TIME = 180ns
V
V
GAIN = –10
RECOVERY TIME = 200ns
S
IN
S
IN
= ±1.35V
= 200mV
= ±1.35V
= 200mV
250
300
350

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