MCP6293-E/SN Microchip Technology, MCP6293-E/SN Datasheet - Page 3
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MCP6293-E/SN
Manufacturer Part Number
MCP6293-E/SN
Description
IC OPAMP 2.4V SNGL CS R-R 8SOIC
Manufacturer
Microchip Technology
Datasheets
1.PIC16F690DM-PCTLHS.pdf
(36 pages)
2.MCP6291T-EOT.pdf
(16 pages)
3.MCP6293T-ECH.pdf
(32 pages)
Specifications of MCP6293-E/SN
Slew Rate
7 V/µs
Amplifier Type
General Purpose
Number Of Circuits
1
Output Type
Rail-to-Rail
Gain Bandwidth Product
10MHz
Current - Input Bias
1pA
Voltage - Input Offset
3000µV
Current - Supply
1mA
Current - Output / Channel
25mA
Voltage - Supply, Single/dual (±)
2.4 V ~ 6 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Op Amp Type
General Purpose
No. Of Amplifiers
1
Bandwidth
10MHz
Supply Voltage Range
2.4V To 5.5V
Amplifier Case Style
SOIC
No. Of Pins
8
Operating Temperature Range
-40°C To
Number Of Channels
1
Voltage Gain Db
110 dB
Common Mode Rejection Ratio (min)
70 dB
Input Offset Voltage
3 mV
Operating Supply Voltage
3 V, 5 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Request inventory verification / Request inventory verification
-3db Bandwidth
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MCP6293-E/SN
Manufacturer:
MICROCHIP
Quantity:
12 000
Part Number:
MCP6293-E/SN
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
AC ELECTRICAL SPECIFICATIONS
MCP6293/MCP6295 CHIP SELECT (CS) SPECIFICATIONS
© 2007 Microchip Technology Inc.
Electrical Characteristics: Unless otherwise indicated, T
V
AC Response
Gain Bandwidth Product
Phase Margin at Unity-Gain
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Electrical Characteristics: Unless otherwise indicated, T
V
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
CS Logic Threshold, High
CS Input Current, High
GND Current per Amplifier
Amplifier Output Leakage
Dynamic Specifications (Note 1)
CS Low to Valid Amplifier Output,
Turn-on Time
CS High to Amplifier Output High-Z
Hysteresis
Note 1:
OUT
OUT
≈ V
≈ V
DD
DD
/2, V
/2, V
Parameters
The input condition (V
at the output of op amp B (V
L
L
Parameters
= V
= V
DD
DD
/2, R
/2, R
L
L
= 10 kΩ to V
= 10 kΩ to V
IN
) specified applies to both op amp A and B of the MCP6295. The dynamic specification is tested
V
OUTB
Sym
I
I
t
V
t
HYST
V
CSH
I
OFF
CSL
—
ON
SS
IH
L
IL
L
, C
, C
).
L
L
= 60 pF, and CS is tied low (refer to
= 60 pF, and CS is tied low (refer to
GBWP
Sym
PM
0.8 V
SR
E
e
i
ni
ni
ni
V
Min
—
—
—
—
—
—
—
SS
DD
A
A
= +25°C, V
= +25°C, V
Min
—
—
—
—
—
—
0.01
0.01
0.01
-0.7
Typ
0.7
0.6
—
—
4
DD
DD
10.0
MCP6291/1R/2/3/4/5
Typ
= +2.4V to +5.5V, V
4.2
8.7
= +2.4V to +5.5V, V
0.2 V
65
7
3
V
Max
—
—
—
10
—
—
2
DD
DD
Max
—
—
—
—
—
—
Figure 1-2
Figure 1-2
Units
µA
µA
µA
µA
µs
µs
V
V
V
SS
SS
nV/√Hz
fA/√Hz
CS = V
CS = V
CS = V
CS = V
CS Low ≤ 0.2 V
V
V
CS High ≥ 0.8 V
V
V
µV
Units
MHz
and
V/µs
= GND, V
= GND, V
and
IN
DD
IN
DD
°
P-P
= V
= V
= 5.0V
= 5V
Figure
Figure
SS
DD
DD
DD
DD
DD
G = +1 V/V
f = 0.1 Hz to 10 Hz
f = 10 kHz
f = 1 kHz
/2, V
/2, V
CM
CM
Conditions
1-3).
1-3).
= V
= V
OUT
OUT
DD
DD
Conditions
DS21812E-page 3
DD
DD
, G = +1 V/V,
, G = +1 V/V,
= 0.9 V
= 0.1 V
/2,
/2,
DD
DD
/2,
/2