MC9S08DV16MLF Freescale Semiconductor, MC9S08DV16MLF Datasheet - Page 387
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MC9S08DV16MLF
Manufacturer Part Number
MC9S08DV16MLF
Description
IC MCU 16K FLASH 1K RAM 48-LQFP
Manufacturer
Freescale Semiconductor
Series
HCS08r
Specifications of MC9S08DV16MLF
Core Processor
HCS08
Core Size
8-Bit
Speed
40MHz
Connectivity
CAN, I²C, LIN, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
39
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 16x12b
Oscillator Type
External
Operating Temperature
-40°C ~ 125°C
Package / Case
48-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC9S08DV16MLF
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
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A.13 Flash
This section provides details about program/erase times and program-erase endurance for the Flash
memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see
A.14 EMC Performance
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the
MCU resides. Board design and layout, circuit topology choices, location and characteristics of external
components as well as MCU software operation all play a significant role in EMC performance. The
system designer should consult Freescale applications notes such as AN2321, AN1050, AN1263,
AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC performance.
Freescale Semiconductor
1
2
3
4
Num
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
Typical endurance for Flash is based on the intrinsic bit cell performance. For additional information on how Freescale
Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile
Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines typical data
retention, please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
10
1
2
3
4
5
6
7
8
9
—
—
—
—
—
—
—
—
C
C
C
Supply voltage for program/erase
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Flash Program/erase endurance
Data retention
0 < f
0 < f
T
T = 25°C
L
to T
Bus
Bus
H
< 20 MHz
< 8 MHz
= –40°C to + 125°C
4
2
(2)
Rating
1
MC9S08DV60 Series Data Sheet, Rev 3
Table A-17. Flash Characteristics
(2)
3
(2)
V
Symbol
prog/erase
V
n
f
t
t
t
t
t
t
FCLK
D_ret
Burst
Page
Mass
Fcyc
FLPE
prog
Read
10,000
150
Min
2.7
2.7
15
—
5
Chapter 4,
100,000
Typical
20,000
4000
100
Appendix A Electrical Characteristics
—
9
4
“Memory.”
6.67
Max
200
5.5
5.5
—
—
—
DD
cycles
years
supply.
t
t
t
t
Unit
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
387
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