MCR908JK1CDWE Freescale Semiconductor, MCR908JK1CDWE Datasheet - Page 41

• Manufacturer Part Number: MCR908JK1CDWE
• Description: IC MCU 1.5K FLASH 20-SOIC
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MCR908JK1CDWE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Peripherals: LED, LVD, POR, PWM
• Number Of I /o: 14
• Program Memory Size: 1.5KB (1.5K x 8)
• Program Memory Type: FLASH
• Ram Size: 128 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.3 V
• Data Converters: A/D 12x8b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 20-SOIC (7.5mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Connectivity: -

4.5 FLASH Block Erase Operation
MC68H(R)C908JL3
Freescale Semiconductor
—
Rev. 1.1
MASS — Mass Erase Control Bit
ERASE — Erase Control Bit
PGM — Program Control Bit
Use the following procedure to erase a block of FLASH memory. A block
consists of 64 consecutive bytes starting from addresses $XX00,
$XX40, $XX80 or $XXC0. The 48-byte User Interrupt Vectors area also
forms a block. Any block within the 4K bytes User Memory area
($EC00–$FBFF) can be erased alone. The 48-byte User Interrupt Vector
blocks can not be erased alone due to security concern. Mass erase is
required to erase this block.
1. Set the ERASE bit and clear the MASS bit in the FLASH Control
2. Write any data to any FLASH location within the address range of
3. Wait for a time, t
4. Set the HVEN bit.
This read/write bit configures the memory for mass erase operation or
block erase operation when the ERASE bit is set.
This read/write bit configures the memory for erase operation. This bit
and the PGM bit should not be set to 1 at the same time.
This read/write bit configures the memory for program operation. This
bit and the ERASE bit should not be set to 1 at the same time.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = Mass Erase operation selected
0 = Block Erase operation selected
1 = Erase operation selected
0 = Erase operation not selected
1 = Program operation selected
0 = Program operation not selected
Register.
the block to be erased.
FLASH Memory (FLASH)
nvs
(10µs).
FLASH Memory (FLASH)
Technical Data
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