C8051F310 Silicon Laboratories Inc, C8051F310 Datasheet - Page 112
![no-image](/images/manufacturer_photos/0/6/609/silicon_laboratories_inc_sml.jpg)
C8051F310
Manufacturer Part Number
C8051F310
Description
IC 8051 MCU 16K FLASH 32LQFP
Manufacturer
Silicon Laboratories Inc
Series
C8051F31xr
Specifications of C8051F310
Core Processor
8051
Core Size
8-Bit
Speed
25MHz
Connectivity
SMBus (2-Wire/I²C), SPI, UART/USART
Peripherals
POR, PWM, Temp Sensor, WDT
Number Of I /o
29
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Ram Size
1.25K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 21x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
32-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
C8051F310
Manufacturer:
Silicon Laboratories Inc
Quantity:
10 000
Company:
Part Number:
C8051F310-GMR
Manufacturer:
TI
Quantity:
1 308
Company:
Part Number:
C8051F310-GQ
Manufacturer:
SiliconL
Quantity:
4 998
Company:
Part Number:
C8051F310-GQ
Manufacturer:
SILICON
Quantity:
411
Company:
Part Number:
C8051F310-GQ
Manufacturer:
Silicon Laboratories Inc
Quantity:
10 000
Part Number:
C8051F310-GQ
Manufacturer:
SILICONLABS原装
Quantity:
20 000
Company:
Part Number:
C8051F310-GQR
Manufacturer:
SILICON
Quantity:
3 300
Company:
Part Number:
C8051F310-GQR
Manufacturer:
Silicon Laboratories Inc
Quantity:
10 000
Part Number:
C8051F310-GQR
Manufacturer:
SILICON LABS/芯科
Quantity:
20 000
Company:
Part Number:
C8051F310R
Manufacturer:
Silicon Laboratories Inc
Quantity:
10 000
C8051F310/1/2/3/4/5/6/7
10.1.3. Flash Write Procedure
Flash bytes are programmed by software with the following sequence:
Steps 5–7 must be repeated for each byte to be written. After Flash writes are complete, PSWE should be
cleared so that MOVX instructions do not target program memory.
10.2. Non-volatile Data Storage
The Flash memory can be used for non-volatile data storage as well as program code. This allows data
such as calibration coefficients to be calculated and stored at run time. Data is written using the MOVX
write instruction and read using the MOVC instruction. Note: MOVX read instructions always target XRAM.
112
V
*Note: 512 bytes at locations 0x3E00 (C8051F310/1) are reserved.
DD
Erase Cycle Time
Write Cycle Time
= 2.7 to 3.6 V; –40 to +85 °C unless otherwise specified.
Parameter
Endurance
Flash Size
Step 1. Disable interrupts (recommended).
Step 2. Erase the 512-byte Flash page containing the target location, as described in
Step 3. Set the PSWE bit (register PSCTL).
Step 4. Clear the PSEE bit (register PSCTL).
Step 5. Write the first key code to FLKEY: 0xA5.
Step 6. Write the second key code to FLKEY: 0xF1.
Step 7. Using the MOVX instruction, write a single data byte to the desired location within the
10.1.2.
512 byte sector.
Table 10.1. Flash Electrical Characteristics
25 MHz System Clock
25 MHz System Clock
C8051F310/1/6/7
C8051F312/3/4/5
Conditions
Rev. 1.7
16384*
8192
20 k
Min
10
40
100 k
Typ
15
55
—
—
Max
20
70
—
—
—
Erase/Write
Section
Units
bytes
ms
µs