ATTINY13-20SSI Atmel, ATTINY13-20SSI Datasheet - Page 17

• Manufacturer Part Number: ATTINY13-20SSI
• Description: IC MCU AVR 1K FLASH 20MHZ 8SOIC
• Manufacturer: Atmel
• Series: AVR® ATtinyr

Specifications of ATTINY13-20SSI

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 20MHz
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 6
• Program Memory Size: 1KB (512 x 16)
• Program Memory Type: FLASH
• Eeprom Size: 64 x 8
• Ram Size: 64 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 4x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (3.9mm Width)
• Data Bus Width: 8 bit
• Data Ram Size: 64 B
• Interface Type: SPI
• Maximum Clock Frequency: 20 MHz
• Number Of Programmable I/os: 6
• Number Of Timers: 2
• Operating Supply Voltage: 2.7 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 4 Channel
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Connectivity: -
• Lead Free Status / Rohs Status: No
• Other names: ATTINY13-24SSI; ATTINY13-24SSI

8. Errata
8.1
8.2
8.3
8.3.1
8.3.2
8.3.3
2535JS–AVR–08/10
ATtiny13 Rev. D
ATtiny13 Rev. C
ATtiny13 Rev. B
Wrong values read after Erase Only operation
High Voltage Serial Programming Flash, EEPROM, Fuse and Lock Bits may fail
Device may lock for further programming
The revision letter in this section refers to the revision of the ATtiny13 device.
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1. EEPROM can not be written below 1.9 Volt
Revision C has not been sampled.
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•
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•
•
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EEPROM can not be written below 1.9 Volt
Wrong values read after Erase Only operation
High Voltage Serial Programming Flash, EEPROM, Fuse and Lock Bits may fail
Device may lock for further programming
debugWIRE communication not blocked by lock-bits
Watchdog Timer Interrupt disabled
EEPROM can not be written below 1.9 Volt
Writing the EEPROM at V
Problem Fix/Workaround
Do not write the EEPROM when V
At supply voltages below 2.7 V, an EEPROM location that is erased by the Erase Only oper-
ation may read as programmed (0x00).
Problem Fix/Workaround
If it is necessary to read an EEPROM location after Erase Only, use an Atomic Write opera-
tion with 0xFF as data in order to erase a location. In any case, the Write Only operation can
be used as intended. Thus no special considerations are needed as long as the erased loca-
tion is not read before it is programmed.
Writing to any of these locations and bits may in some occasions fail.
Problem Fix/Workaround
After a writing has been initiated, always observe the RDY/BSY signal. If the writing should
fail, rewrite until the RDY/BSY verifies a correct writing. This will be fixed in revision D.
Special combinations of fuse bits will lock the device for further programming effectively
turning it into an OTP device. The following combinations of settings/fuse bits will cause this
effect:
– 128 kHz internal oscillator (CKSEL[1..0] = 11), shortest start-up time
– 9.6 MHz internal oscillator (CKSEL[1..0] = 10), shortest start-up time
(SUT[1..0] = 00), Debugwire enabled (DWEN = 0) or Reset disabled RSTDISBL = 0.
(SUT[1..0] = 00), Debugwire enabled (DWEN = 0) or Reset disabled RSTDISBL = 0.
CC
below 1.9 volts might fail.
CC
is below 1.9 volts.
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