PIC18F448-E/L Microchip Technology, PIC18F448-E/L Datasheet - Page 8
![IC MCU FLASH 8KX16 W/CAN 44-PLCC](/photos/6/63/66325/150-44-plcc_sml.jpg)
PIC18F448-E/L
Manufacturer Part Number
PIC18F448-E/L
Description
IC MCU FLASH 8KX16 W/CAN 44-PLCC
Manufacturer
Microchip Technology
Series
PIC® 18Fr
Datasheets
1.PIC18LF242-ISO.pdf
(36 pages)
2.PIC18F248-ISO.pdf
(402 pages)
3.PIC18F248-ISO.pdf
(8 pages)
Specifications of PIC18F448-E/L
Core Processor
PIC
Core Size
8-Bit
Speed
40MHz
Connectivity
CAN, I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, LVD, POR, PWM, WDT
Number Of I /o
33
Program Memory Size
16KB (8K x 16)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
768 x 8
Voltage - Supply (vcc/vdd)
4.2 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
External
Operating Temperature
-40°C ~ 125°C
Package / Case
44-PLCC
Processor Series
PIC18F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
768 B
Interface Type
I2C, SPI, USART
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
33
Number Of Timers
4 bit
Operating Supply Voltage
2 V to 5.5 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, DV164136, DM163011
Minimum Operating Temperature
- 40 C
On-chip Adc
8
For Use With
DVA16XL441 - ADAPTER DEVICE ICE 44PLCC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PIC18F448-E/L
Manufacturer:
Microchip Technology
Quantity:
10 000
PIC18FXX2/XX8
3.1.1
When using low voltage ICSP, the part must be sup-
plied by the voltage specified in parameter D111, if a
bulk erase is to be executed. All other bulk erase details
as described above apply.
If it is determined that a program memory erase must
be performed at a supply voltage below the bulk erase
limit, refer to the erase methodology described in
Sections 3.1.2 and 3.2.2.
If it is determined that a data EEPROM erase must be
performed at a supply voltage below the bulk erase
limit, follow the methodology described in Section 3.4
and write ones to the array.
DS39576C-page 8
LOW VOLTAGE ICSP BULK ERASE
3.1.2
Irrespective of whether high or low voltage ICSP is
used, it is possible to erase single row (64 bytes of
data) in all panels at once. For example, in the case of
a 64-Kbyte device (8 panels), 512 bytes through 64
bytes in each panel, can be erased simultaneously dur-
ing each erase sequence. In this case, the offset of the
erase within each panel is the same (see Figure 3-5).
Multi-Panel Single Row Erase is enabled by appropri-
ately configuring the Programming Control register
located at 3C0006h.
The multi-panel single row erase duration is externally
timed and is controlled by SCLK. After a “Start Pro-
gramming” command is issued (4-bit command,
‘1111’), a NOP is issued, where the 4th SCLK is held
high for the duration of the programming time, P9.
After SCLK is brought low, the programming sequence
is terminated. SCLK must be held low for the time spec-
ified by parameter P10 to allow high voltage discharge
of the memory array.
The code sequence to program a PIC18FXX2/XX8
device is shown in Table 3-3. The flowchart shown in
Figure 3-3 depicts the logic necessary to completely
erase a PIC18FXX2/XX8 device. The timing diagram
that details the “Start Programming” command, and
parameters P9 and P10 is shown in Figure 3-6.
Note:
The TBLPTR register must contain the
same offset value when initiating the pro-
gramming sequence as it did when the
write buffers were loaded.
ICSP MULTI-PANEL SINGLE ROW
ERASE
2010 Microchip Technology Inc.