DF36034GFPJV Renesas Electronics America, DF36034GFPJV Datasheet - Page 123
DF36034GFPJV
Manufacturer Part Number
DF36034GFPJV
Description
MCU 3/5V 32K J TEMP PB-FREE 64LQ
Manufacturer
Renesas Electronics America
Series
H8® H8/300H Tinyr
Specifications of DF36034GFPJV
Core Processor
H8/300H
Core Size
16-Bit
Speed
20MHz
Connectivity
CAN, SCI, SSU
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
45
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
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The features of the 56-kbyte or 32-kbyte flash memories built into the flash memory (F-ZTAT)
version are summarized below.
7.1
Figure 7.1 shows the block configuration of flash memory. The thick lines indicate erasing units,
the narrow lines indicate programming units, and the values are addresses. The 56-kbyte flash
memory is divided into 1 kbyte 4 blocks, 28 kbytes 1 block, 16 kbytes 1 block, and 8 kbytes
Erasing is performed in these units. Programming is performed in 128-byte units starting from an
address with lower eight bits H'00 or H'80.
1 block. The 32-kbyte flash memory is divided into 1 kbyte 4 blocks and 28 kbytes 1 blocks.
Programming/erase methods
Reprogramming capability
On-board programming
Programmer mode
Automatic bit rate adjustment
Programming/erasing protection
Power-down mode
The flash memory is programmed 128 bytes at a time. Erase is performed in single-block
units. The flash memory is configured as follows: 1 kbyte 4 blocks, 28 kbytes 1 block,
16 kbytes 1 block, and 8 kbytes 1 block for the H8/36057F and H8/36037F and 1 kbyte
flash memory, each block must be erased in turn.
The flash memory can be reprogrammed up to 1,000 times.
On-board programming/erasing can be done in boot mode, in which the boot program built
into the chip is started to erase or program of the entire flash memory. In normal user
program mode, individual blocks can be erased or programmed.
Flash memory can be programmed/erased in programmer mode using a PROM
programmer, as well as in on-board programming mode.
For data transfer in boot mode, this LSI's bit rate can be automatically adjusted to match
the transfer bit rate of the host.
Sets software protection against flash memory programming/erasing.
Operation of the power supply circuit can be partly halted in subactive mode. As a result,
flash memory can be read with low power consumption.
4 blocks and 28 kbytes
Block Configuration
1 block for the H8/36054F and H8/36034F. To erase the entire
Section 7 ROM
Rev. 4.00 Mar. 15, 2006 Page 89 of 556
REJ09B0026-0400
Section 7 ROM
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