C8051F930-GQ Silicon Laboratories Inc, C8051F930-GQ Datasheet - Page 45

IC 8051 MCU 64K FLASH 32-LQFP

C8051F930-GQ

Manufacturer Part Number
C8051F930-GQ
Description
IC 8051 MCU 64K FLASH 32-LQFP
Manufacturer
Silicon Laboratories Inc
Series
C8051F9xxr
Datasheets

Specifications of C8051F930-GQ

Program Memory Type
FLASH
Program Memory Size
64KB (64K x 8)
Package / Case
32-LQFP
Core Processor
8051
Core Size
8-Bit
Speed
25MHz
Connectivity
SMBus (2-Wire/I²C), SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Number Of I /o
24
Ram Size
4.25K x 8
Voltage - Supply (vcc/vdd)
0.9 V ~ 3.6 V
Data Converters
A/D 23x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Processor Series
C8051F9x
Core
8051
Data Bus Width
8 bit
Data Ram Size
4.25 KB
Interface Type
I2C/SMBus/SPI/UART
Maximum Clock Frequency
25 MHz
Number Of Programmable I/os
24
Number Of Timers
4
Operating Supply Voltage
0.9 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
PK51, CA51, A51, ULINK2
Development Tools By Supplier
C8051F930DK
Minimum Operating Temperature
- 40 C
On-chip Adc
23-ch x 10-bit
No. Of I/o's
24
Ram Memory Size
4KB
Cpu Speed
25MHz
No. Of Timers
4
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
336-1478 - PLATFORM PROG TOOLSTCK F920,F930336-1477 - PLATFORM PROG TOOLSTCK F920,F930336-1473 - KIT DEV C8051F920,F921,F930,F931336-1472 - BOARD TARGET/PROTO W/C8051F930
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-1466

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
C8051F930-GQ
Manufacturer:
SILICON
Quantity:
3 500
Part Number:
C8051F930-GQ
Manufacturer:
Silicon Laboratories Inc
Quantity:
10 000
Part Number:
C8051F930-GQR
Manufacturer:
Silicon Laboratories Inc
Quantity:
10 000
Part Number:
C8051F930-GQR
Manufacturer:
SILICON LABS/芯科
Quantity:
20 000
Table 4.2. Global Electrical Characteristics (Continued)
–40 to +85 °C, 25 MHz system clock unless otherwise specified. See "AN358: Optimizing Low Power Operation of the
‘F9xx" for details on how to achieve the supply current specifications listed in this table.
Digital Supply Current—Suspend and Sleep Mode
Digital Supply Current
(Suspend Mode)
Digital Supply Current
(Sleep Mode, SmaRTClock
running)
Digital Supply Current
(Sleep Mode)
Notes:
1. Based on device characterization data; Not production tested.
2. SYSCLK must be at least 32 kHz to enable debugging.
3. Digital Supply Current depends upon the particular code being executed. The values in this table are obtained with
4. Includes oscillator and regulator supply current.
5. IDD can be estimated for frequencies <10 MHz by simply multiplying the frequency of interest by the frequency
6. The supply current specifications in Table 4.2 are for two cell mode. The VBAT current in one-cell mode can be
7. Idle IDD can be estimated by taking the current at 25 MHz minus the difference in current indicated by the
the CPU executing an “sjmp $” loop, which is the compiled form of a while(1) loop in C. One iteration requires 3
CPU clock cycles, and the Flash memory is read on each cycle. The supply current will vary slightly based on the
physical location of the sjmp instruction and the number of Flash address lines that toggle as a result. In the worst
case, current can increase by up to 30% if the sjmp loop straddles a 128-byte Flash address boundary (e.g.,
0x007F to 0x0080). Real-world code with larger loops and longer linear sequences will have few transitions across
the 128-byte address boundaries.
sensitivity number for that range, then adding an offset of 90 µA. When using these numbers to estimate I
>10 MHz, the estimate should be the current at 25 MHz minus the difference in current indicated by the frequency
sensitivity number. For example: V
estimated using the following equation:
The VBAT Voltage is the voltage at the VBAT pin, typically 0.9 to 1.8 V.
The Supply Current (two-cell mode) is the data sheet specification for supply current.
The Supply Voltage is the voltage at the VDD/DC+ pin, typically 1.8 to 3.3 V (default = 1.9 V).
The DC-DC Converter Efficiency can be estimated using Figure 4.3–Figure 4.5.
frequency sensitivity number. For example: V
20 MHz) x 0.120 mA/MHz = 3.5 mA.
5 MHz) x 0.095 mA/MHz = 0.6 mA.
Parameter
VBAT Current (one-cell mode)
6
V
1.8 V, T = 25
3.0 V, T = 25
3.6 V, T = 25
1.8 V, T = 85
3.0 V, T = 85
3.6 V, T = 85
(includes SmaRTClock oscillator and VBAT
Supply Monitor)
1.8 V, T = 25 °C
3.0 V, T = 25 °C
3.6 V, T = 25 °C
1.8 V, T = 85 °C
3.0 V, T = 85 °C
3.6 V, T = 85 °C
(includes VBAT supply monitor)
DD
= 1.8–3.6 V, two-cell mode
DD
= 3.0 V; F = 20 MHz, I
=
°
°
°
°
°
°
C
C
C
C
C
C
DD
---------------------------------------------------------------------------------------------------------------------------------- -
Supply Voltage Supply Current (two-cell mode)
Conditions
DC-DC Converter Efficiency VBAT Voltage
= 3.0 V; F = 5 MHz, Idle I
Rev. 1.1
C8051F93x-C8051F92x
DD
= 4.1 mA – (25 MHz –
DD
= 2.5 mA – (25 MHz –
Min
0.60
0.75
0.85
1.30
1.60
1.90
0.05
0.08
0.12
0.75
0.90
1.20
Typ
77
Max
DD
Units
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
for
45

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