MCF51AC256ACLKE Freescale Semiconductor, MCF51AC256ACLKE Datasheet - Page 17

MCU 32BIT 256K FLASH CAN 80-LQFP

MCF51AC256ACLKE

Manufacturer Part Number
MCF51AC256ACLKE
Description
MCU 32BIT 256K FLASH CAN 80-LQFP
Manufacturer
Freescale Semiconductor
Series
MCF51ACr
Datasheet

Specifications of MCF51AC256ACLKE

Core Processor
Coldfire V1
Core Size
32-Bit
Speed
50MHz
Connectivity
CAN, I²C, SCI, SPI
Peripherals
LVD, PWM, WDT
Number Of I /o
69
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 24x12b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
80-LQFP
Processor Series
MCF51AC
Core
ColdFire V1
Data Bus Width
32 bit
Data Ram Size
32 KB
Interface Type
I2C, SPI
Maximum Clock Frequency
50.33 MHz
Number Of Programmable I/os
69
Number Of Timers
2
Operating Supply Voltage
2.7 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
JLINK-CF-BDM26, EWCF
Minimum Operating Temperature
- 40 C
On-chip Adc
12 bit, 24 Channel
Controller Family/series
ColdFire
No. Of I/o's
69
Ram Memory Size
32KB
Cpu Speed
50.33MHz
No. Of Timers
2
Embedded Interface Type
CAN, I2C, SCI, SPI
Rohs Compliant
Yes
Cpu Family
MCF51AC
Device Core
ColdFire
Device Core Size
32b
Frequency (max)
50.33MHz
Total Internal Ram Size
32KB
# I/os (max)
69
Number Of Timers - General Purpose
12
Operating Supply Voltage (typ)
3.3/5V
Operating Supply Voltage (max)
5.5V
Operating Supply Voltage (min)
2.7V
Instruction Set Architecture
RISC
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
80
Package Type
LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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Part Number:
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Part Number:
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The average chip-junction temperature (T
where:
For most applications, P
(if P
Solving
where K is a constant pertaining to the particular part. K can be determined from
P
solving
2.4
Although damage from static discharge is much less common on these devices than on early CMOS
circuits, normal handling precautions should be used to avoid exposure to static discharge. Qualification
tests are performed to ensure that these devices can withstand exposure to reasonable levels of static
without suffering any permanent damage.
All ESD testing is in conformity with CDF-AEC-Q00 Stress Test Qualification for Automotive Grade
Integrated Circuits. (http://www.aecouncil.com/) This device was qualified to AEC-Q100 Rev E.
A device is considered to have failed if, after exposure to ESD pulses, the device no longer meets the
device specification requirements. Complete dc parametric and functional testing is performed per the
Freescale Semiconductor
D
(at equilibrium) for a known T
I/O
T
P
P
P
is neglected) is:
Equation 1
Equation 1
A
JA
D
int
I/O
Electrostatic Discharge (ESD) Protection Characteristics
= Ambient temperature, C
= P
= Package thermal resistance, junction-to-ambient, C/W
= I
= Power dissipation on input and output pins — user determined
2
3
4
int
DD
Junction to Ambient Natural Convection
1s — Single layer board, one signal layer
2s2p — Four layer board, 2 signal and 2 power layers
P
 V
and
and
I/O
DD
Equation 2
I/O
Equation 2
, Watts — chip internal power
 P
MCF51AC256 ColdFire Microcontroller Data Sheet, Rev.6
int
K = P
A
and can be neglected. An approximate relationship between P
iteratively for any value of T
. Using this value of K, the values of P
for K gives:
D
P
T
 (T
D
J
J
= K  (T
) in C can be obtained from:
= T
A
+ 273C) + 
A
+ (P
J
+ 273C)
D
 
JA
JA
)
 (P
D
A
)
.
2
D
and T
Equation 3
J
Electrical Characteristics
can be obtained by
by measuring
D
and T
Eqn. 1
Eqn. 2
Eqn. 3
17
J

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