MCF51JM32EVLK Freescale Semiconductor, MCF51JM32EVLK Datasheet - Page 34
![no-image](/images/manufacturer_photos/0/2/262/freescale_semiconductor_sml.jpg)
MCF51JM32EVLK
Manufacturer Part Number
MCF51JM32EVLK
Description
MCU 32K FLASH 16K SRAM 80-LQFP
Manufacturer
Freescale Semiconductor
Series
MCF51JMr
Datasheet
1.MCF51JM64VLD.pdf
(50 pages)
Specifications of MCF51JM32EVLK
Core Processor
Coldfire V1
Core Size
32-Bit
Speed
50MHz
Connectivity
CAN, I²C, SCI, SPI, USB OTG
Peripherals
LVD, PWM, WDT
Number Of I /o
66
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 12x12b
Oscillator Type
External
Operating Temperature
-40°C ~ 105°C
Package / Case
80-LQFP
Processor Series
MCF51JM
Core
ColdFire V1
Data Bus Width
32 bit
Data Ram Size
16 KB
Interface Type
SCI, SPI
Maximum Clock Frequency
50.33 MHz
Number Of Programmable I/os
66
Number Of Timers
9
Maximum Operating Temperature
+ 105 C
Mounting Style
SMD/SMT
3rd Party Development Tools
JLINK-CF-BDM26, EWCF
Development Tools By Supplier
DEMOJM, DEMOFLEXISJMSD
Minimum Operating Temperature
- 40 C
On-chip Adc
12 bit, 12 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Preliminary Electrical Characteristics
2.13
This section provides details about program/erase times and program-erase endurance for the Flash memory.
Program and erase operations do not require any special power sources other than the normal V
2.14
The USB electricals for the USBOTG module conform to the standards documented by the Universal Serial Bus Implementers
Forum. For the most up-to-date standards, visit http://www.usb.org.
If the Freescale USBOTG implementation requires additional or deviant electrical characteristics, this space would be used to
communicate that information.
34
1
2
3
4
5
Num
Typical values are based on characterization data at V
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information
supplied for calculating approximate time to program and erase.
Typical endurance for Flash was evaluated for this product family on the 9S12Dx64. For additional information on
how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical
Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines
typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
10
1
2
4
6
8
3
5
7
9
Flash Specifications
USB Electricals
C
C
Supply voltage for program/erase
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
T
T = 25°C
L
to T
H
= –40°C to + 105°C
Characteristic
5
3
(2)
MCF51JM128 ColdFire Microcontroller, Rev. 3
2
Table 21. Flash Characteristics
4
(2)
(2)
DD
V
= 5.0 V, 25°C unless otherwise stated.
Symbol
prog/erase
V
f
t
t
t
t
t
t
FCLK
Burst
Page
Mass
D_ret
Fcyc
prog
Read
10,000
Min
150
2.7
2.7
15
—
5
20,000
4000
100,000
Typ
9
4
100
—
DD
1
supply.
Freescale Semiconductor
Max
6.67
200
5.5
5.5
—
—
—
cycles
years
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V