S9S08AW16AE0MFT Freescale Semiconductor, S9S08AW16AE0MFT Datasheet - Page 53

• Manufacturer Part Number: S9S08AW16AE0MFT
• Description: MCU 16K FLASH AUTO MONET 48-QFN
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of S9S08AW16AE0MFT

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: I²C, SCI, SPI
• Peripherals: LVD. POR, PWM, WDT
• Number Of I /o: 38
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 48-QFN Exposed Pad
• Controller Family/series: HCS08
• No. Of I/o's: 38
• Ram Memory Size: 1KB
• Cpu Speed: 40MHz
• No. Of Timers: 2
• Rohs Compliant: Yes
• Processor Series: S08AW
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 1 KB
• Interface Type: I2C, SCI, SPI
• Maximum Clock Frequency: 40 MHz
• Number Of Programmable I/os: 54
• Number Of Timers: 2
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: DEMO9S08AW60E
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 8 Channel
• Height: 1 mm
• Length: 7 mm
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 2.7 V
• Width: 7 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

4.4.4
The burst program command is used to program sequential bytes of data in less time than would be
required using the standard program command. This is possible because the high voltage to the FLASH
array does not need to be disabled between program operations. Ordinarily, when a program or erase
command is issued, an internal charge pump associated with the FLASH memory must be enabled to
supply high voltage to the array. Upon completion of the command, the charge pump is turned off. When
a burst program command is issued, the charge pump is enabled and then remains enabled after completion
of the burst program operation if these two conditions are met:
Freescale Semiconductor
•
•
The next burst program command has been queued before the current program operation has
completed.
The next sequential address selects a byte on the same physical row as the current byte being
programmed. A row of FLASH memory consists of 64 bytes. A byte within a row is selected by
addresses A5 through A0. A new row begins when addresses A5 through A0 are all zero.
Burst Program Execution
FLASH PROGRAM AND
ERASE FLOW
Figure 4-3. FLASH Program and Erase Flowchart
0
TO BUFFER ADDRESS AND DATA
MC9S08AW60 Data Sheet, Rev 2
WRITE COMMAND TO FCMD
AND CLEAR FCBEF
TO LAUNCH COMMAND
WRITE TO FCDIV
WRITE 1 TO FCBEF
WRITE TO FLASH
CLEAR ERROR
FACCERR ?
FPVIOL OR
FACCERR ?
FCCF ?
START
DONE
1
NO
1
(Note 1)
(Note 2)
YES
0
Note 2: Wait at least four bus cycles
Note 1: Required only once after reset.
ERROR EXIT
before checking FCBEF or FCCF.
Chapter 4 Memory
53