MC9S08SV16CLC Freescale Semiconductor, MC9S08SV16CLC Datasheet - Page 11

• Manufacturer Part Number: MC9S08SV16CLC
• Description: MCU 8BIT 16K FLASH 32-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08SV16CLC

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: I²C, LIN, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 30
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 12x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-LQFP
• Processor Series: S08SV
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 1 KB
• Interface Type: SCI, SPI
• Maximum Clock Frequency: 40 MHz
• Number Of Programmable I/os: 30
• Number Of Timers: 1
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: DEMO9S08SV16
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 12 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

where:
T
θ
P
P
P
For most applications, P
(if P
Solving
where K is a constant pertaining to the particular part. K can be determined from
P
solving
5.5
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions must be taken to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
During the device qualification, ESD stresses were performed for the human body model (HBM) and the
charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless instructed otherwise in the device
specification.
Freescale Semiconductor
JA
A
D
int
I/O
D
= Ambient temperature, °C
= P
(at equilibrium) for an known T
= Package thermal resistance, junction-to-ambient, °C/W
= I
I/O
= Power dissipation on input and output pins — user determined
int
DD
is neglected) is:
Equation 1
Equation 1
+ P
ESD Protection and Latch-Up Immunity
× V
I/O
Latch-up
Human
Model
DD
body
, Watts — chip internal power
and
and
Series resistance
Storage capacitance
Number of pulses per pin
Minimum input voltage limit
Maximum input voltage limit
Equation 2
I/O
Equation 2
<< P
Table 5. ESD and Latch-Up Test Conditions
int
K = P
Description
and can be neglected. An approximate relationship between P
A
iteratively for any value of T
MC9S08SV16 Series Data Sheet, Rev. 2
for K gives:
. Using this value of K, the values of P
D
P
× (T
D
= K ÷ (T
A
+ 273°C) + θ
J
+ 273°C)
Symbol
R1
JA
—
—
—
C
× (P
D
A
)
.
2
Value
1500
–2.5
100
7.5
1
D
and T
Equation 3
Electrical Characteristics
J
can be obtained by
Unit
pF
—
Ω
V
V
by measuring
D
and T
Eqn. 2
Eqn. 3
11
J