MC9RS08KA4CPJ Freescale Semiconductor, MC9RS08KA4CPJ Datasheet - Page 7

• Manufacturer Part Number: MC9RS08KA4CPJ
• Description: MCU 8BIT 4K FLASH 20-DIP
• Manufacturer: Freescale Semiconductor
• Series: RS08r

Specifications of MC9RS08KA4CPJ

• Core Processor: RS08
• Core Size: 8-Bit
• Speed: 20MHz
• Connectivity: I²C
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 18
• Program Memory Size: 4KB (4K x 8)
• Program Memory Type: FLASH
• Ram Size: 126 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 12x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 20-DIP (0.300", 7.62mm)
• Processor Series: RS08KA
• Core: RS08
• Data Bus Width: 8 bit
• Data Ram Size: 126 B
• Interface Type: I2C
• Maximum Clock Frequency: 10 MHz
• Number Of Programmable I/os: 18
• Number Of Timers: 1
• Operating Supply Voltage: 5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: Through Hole
• Development Tools By Supplier: DEMO9RS08KA8, DEMO9RS08KA2
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 12 Channel
• Package: 20PDIP
• Family Name: RS08
• Maximum Speed: 20 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

The average chip-junction temperature (TJ) in °C can be obtained from:
where:
T
θ
P
P
P
For most applications, P
(if P
Solving
where K is a constant pertaining to the particular part. K can be determined from
P
solving equations 1 and 2 iteratively for any value of T
3.5
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions must be used to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade
Integrated Circuits. During the device qualification ESD stresses were performed for the human body
model (HBM), the machine model (MM) and the charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
Freescale Semiconductor
JA
A
D
int
I/O
D
= Ambient temperature, °C
= P
(at equilibrium) for a known T
= Package thermal resistance, junction-to-ambient, °C /W
= I
I/O
= Power dissipation on input and output pins user determined
int
DD
is neglected) is:
Equation 1
Thermal resistance 16-pin TSSOP
Thermal resistance 20-pin PDIP
Thermal resistance 20-pin SOIC
+ P
ESD Protection and Latch-Up Immunity
× V
I/O
DD
, Watts chip internal power
and
I/O
Equation 2
Rating
<< P
Table 4. Thermal Characteristics (continued)
int
MC9RS08KA8 Series MCU Data Sheet, Rev. 4
K = P
A
and can be neglected. An approximate relationship between PD and TJ
. Using this value of K, the values of P
for K gives:
D
P
× (T
T
D
J
= K ÷ (T
= T
A
+ 273°C) + θ
A
+ (P
J
+ 273°C)
D
× θ
Symbol
A
θ
θ
θ
JA
.
JA
JA
JA
JA
)
× (PD)
2
Value
75
75
96
D
and T
Equation 3
J
Electrical Characteristics
can be obtained by
°C/W
°C/W
°C/W
Unit
by measuring
Eqn. 1
Eqn. 2
Eqn. 3
7