STM32F103ZDH6 STMicroelectronics, STM32F103ZDH6 Datasheet - Page 81

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STM32F103ZDH6

Manufacturer Part Number
STM32F103ZDH6
Description
MCU ARM 32BIT 384KB FLASH 144BGA
Manufacturer
STMicroelectronics
Series
STM32r
Datasheet

Specifications of STM32F103ZDH6

Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
72MHz
Connectivity
CAN, I²C, IrDA, LIN, SPI, UART/USART, USB
Peripherals
DMA, Motor Control PWM, PDR, POR, PVD, PWM, Temp Sensor, WDT
Number Of I /o
112
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
64K x 8
Voltage - Supply (vcc/vdd)
2 V ~ 3.6 V
Data Converters
A/D 21x12b; D/A 2x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
144-BGA
Processor Series
STM32F103x
Core
ARM Cortex M3
Data Bus Width
32 bit
Data Ram Size
64 KB
Interface Type
CAN, I2C, SPI, USART
Maximum Clock Frequency
72 MHz
Number Of Programmable I/os
112
Number Of Timers
8
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWARM, EWARM-BL, MDK-ARM, RL-ARM, ULINK2
Minimum Operating Temperature
- 40 C
On-chip Adc
3 (12 bit, 16 Channel)
On-chip Dac
2 (12 bit, 2 Channel)
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Eeprom Size
-
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Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details

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STM32F103xC, STM32F103xD, STM32F103xE
5.3.12
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.
Table 42.
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Table 43.
1. Based on characterization results, not tested in production.
V
V
Symbol Parameter
Symbol
ESD(HBM)
ESD(CDM)
S
EMI
Electrostatic discharge
voltage (human body model)
Electrostatic discharge
voltage (charge device model)
Peak level
EMI characteristics
ESD absolute maximum ratings
Ratings
V
LQFP144 package
compliant with IEC
61967-2
DD
3.3 V, T
Conditions
Doc ID 14611 Rev 7
A
25 °C,
T
to JESD22-A114
T
to JESD22-C101
A
A
+25 °C, conforming
+25 °C, conforming
Conditions
0.1 to 30 MHz
30 to 130 MHz
130 MHz to 1GHz
SAE EMI Level
frequency band
Monitored
2
II
Class Maximum value
Max vs. [f
8/48 MHz 8/72 MHz
Electrical characteristics
31
28
8
4
HSE
2000
500
/f
12
21
33
HCLK
4
]
(1)
dBµV
81/123
Unit
Unit
-
V

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