STM8L152K4T6 STMicroelectronics, STM8L152K4T6 Datasheet - Page 82

• Manufacturer Part Number: STM8L152K4T6
• Description: IC MCU 8BIT 16KB FLASH 32LQFP
• Manufacturer: STMicroelectronics
• Series: STM8L EnergyLiter

Specifications of STM8L152K4T6

• Core Processor: STM8
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: I²C, IrDA, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, IR, LCD, POR, PWM, WDT
• Number Of I /o: 29
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 1K x 8
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 21x12b, D/A 1x12
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-LQFP
• Processor Series: STM8L15x
• Core: STM8
• Data Bus Width: 8 bit
• Data Ram Size: 2 KB
• Interface Type: I2C, SPI, USART
• Maximum Clock Frequency: 16 MHz
• Number Of Programmable I/os: 29
• Number Of Timers: 5
• Operating Supply Voltage: 1.8 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWSTM8
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 12 bit, 21 Channel
• On-chip Dac: 12 bit, 1 Channel
• For Use With: 497-10594 - DEM FOR STM8L15X LOW PWR MODES
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10511

Electrical parameters
9.3.5
Table 36.
1. Data based on characterization results, not tested in production.
2. Conforming to JEDEC JESD22a117
3. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation
4. Data based on characterization performed on the whole data memory.
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Symbol
N
t
RET
V
t
I
RW
prog
prog
addresses a single byte.
DD
(2)
(3)
Operating voltage
(all modes, read/write/erase)
Programming time for 1 or 128 bytes (block)
erase/write cycles (on programmed byte)
Programming time for 1 to 128 bytes (block)
write cycles (on erased byte)
Programming/ erasing consumption
Data retention (program memory) after 10000
erase/write cycles at T
(6 suffix)
Data retention (program memory) after 10000
erase/write cycles at T
(3 suffix)
Data retention (data memory) after 300000
erase/write cycles at T
(6 suffix)
Data retention (data memory) after 300000
erase/write cycles at T
(3 suffix)
Erase/write cycles (program memory)
Erase/write cycles (data memory)
Flash program and data EEPROM memory
Memory characteristics
T
Table 35.
1. Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware
Flash memory
A
Symbol
= -40 to 125 °C unless otherwise specified.
V
registers (only in Halt mode). Guaranteed by characterization, not tested in production.
RM
RAM and hardware registers
Parameter
Data retention mode
A
A
A
A
= –40 to +85 °C
= –40 to +125 °C
= –40 to +85 °C
= –40 to +125 °C
Parameter
Doc ID 15962 Rev 6
(1)
Halt mode (or Reset)
T
T
A
A
T
T
=+25 °C, V
=+25 °C, V
T
f
A
A
SYSCLK
Conditions
A
T
T
T
T
= –40 to +105 °C
= –40 to +125 °C
RET
RET
= –40 to +85 °C
RET
RET
Conditions
(7 suffix) or
(6 suffix),
(3 suffix)
= +125 °C
= +125 °C
= +85 °C
= +85 °C
= 16 MHz
DD
DD
= 3.0 V
= 1.8 V
1.65
Min
STM8L151xx, STM8L152xx
300
30
30
10
1.65
Min
5
5
(4)
(1)
(1)
(1)
(1)
(1)
(1)
Typ
Typ
0.7
6
3
Max
Max
3.6
(1)
kcycles
years
Unit
Unit
mA
ms
ms
V
V