STM8S207RBT6C STMicroelectronics, STM8S207RBT6C Datasheet - Page 70

• Manufacturer Part Number: STM8S207RBT6C
• Description: MCU 8BIT 128K FLASH 64-LQFP
• Manufacturer: STMicroelectronics
• Series: STM8Sr

Specifications of STM8S207RBT6C

• Core Processor: STM8
• Core Size: 8-Bit
• Speed: 24MHz
• Connectivity: I²C, IrDA, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 52
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 2K x 8
• Ram Size: 6K x 8
• Voltage - Supply (vcc/vdd): 2.95 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-LQFP
• Processor Series: STM8S20x
• Core: STM8
• 3rd Party Development Tools: EWSTM8
• Development Tools By Supplier: STICE-SYS001
• Featured Product: STM32 Cortex-M3 Companion Products
• For Use With: 497-10592 - BOARD DAUGHTER FOR STM8S207/8497-10593 - KIT STARTER FOR STM8S207/8 SER497-8506 - BOARD EVAL FOR STM8S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
10.3.5
70/105
Memory characteristics
RAM and hardware registers
Table 35.
1. Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware
2. Refer to
Flash program memory/data EEPROM memory
General conditions: T
Table 36.
1. Data based on characterization results, not tested in production.
2. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a
Symbol
t
N
V
t
t
erase
Symbol
I
prog
RET
registers (only in halt mode). Guaranteed by design, not tested in production.
write/erase operation addresses a single byte.
DD
RW
DD
V
RM
Operating voltage
(all modes, execution/write/erase)
Standard programming time
(including erase) for byte/word/block
(1 byte/4 bytes/128 bytes)
Fast programming time for 1 block
(128 bytes)
Erase time for 1 block (128 bytes)
Erase/write cycles
(program memory)
Erase/write cycles (data memory)
Data retention (program memory)
after 10 k erase/write cycles at
T
Data retention (data memory) after 10
k erase/write cycles at T
Data retention (data memory) after
300k erase/write cycles at
T
Supply current (Flash programming or
erasing for 1 to 128 bytes)
Table 19 on page 58
A
A
85 °C
125 °C
RAM and hardware registers
Flash program memory/data EEPROM memory
Data retention mode
A
Parameter
= -40 to 125 °C.
Parameter
(2)
for the value of V
Doc ID 14733 Rev 11
A
85 °C
(1)
(2)
IT-max
.
f
CPU
T
T
T
T
Halt mode (or reset)
Conditions
T
RET
RET
RET
A
A
125 ° C

85 °C
Conditions
= 55° C
= 55° C
= 85° C
24 MHz
STM8S207xx, STM8S208xx
Min
300 k
2.95
10 k
20
20
1
(1)
Typ
V
1M
6
3
3
2
IT-max
Min
(2)
Max
5.5
6.6
3.3
3.3
Unit
cycles
years
V
Unit
mA
ms
ms
ms
V