PIC18F87J11-I/PT Microchip Technology, PIC18F87J11-I/PT Datasheet - Page 5

• Manufacturer Part Number: PIC18F87J11-I/PT
• Description: IC PIC MCU FLASH 64KX16 80TQFP
• Manufacturer: Microchip Technology
• Series: PIC® 18Fr

Specifications of PIC18F87J11-I/PT

• Program Memory Type: FLASH
• Program Memory Size: 128KB (64K x 16)
• Package / Case: 80-TFQFP
• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 48MHz
• Connectivity: EBI/EMI, I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
• Number Of I /o: 68
• Ram Size: 3930 x 8
• Voltage - Supply (vcc/vdd): 2 V ~ 3.6 V
• Data Converters: A/D 15x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Processor Series: PIC18F
• Core: PIC
• Data Bus Width: 8 bit
• Data Ram Size: 3904 B
• Interface Type: EUSART/I2C/MSSP/SPI
• Maximum Clock Frequency: 48 MHz
• Number Of Programmable I/os: 68
• Number Of Timers: 5
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: 52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
• Development Tools By Supplier: PG164130, DV164035, DV244005, DV164005, PG164120, DM183032, DM183022, DV164136
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 15-ch x 10-bit
• Package: 80TQFP
• Device Core: PIC
• Family Name: PIC18
• Maximum Speed: 48 MHz
• Operating Supply Voltage: 1.8|2.5|3.3 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: DV164136 - DEVELOPMENT KIT FOR PIC18AC162091 - HEADER MPLAB ICD2 18F87J11 64/80MA180020 - MODULE PLUG-IN HPC EXPL 18F87J11AC164328 - MODULE SKT FOR 80TQFP
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Data Sheet Clarifications
The following typographic corrections and clarifications
are to be noted for the latest version of the device data
sheet (DS39778D):
1. Module: Table 27-1: Memory
TABLE 27-1:
 2011 Microchip Technology Inc.
DC CHARACTERISTICS
D130
D131
D132B V
D133A T
D133B T
D134
D135
D140
Param
Note:
No.
On page 398, the parameter, D132, which pro-
vides the minimum and maximum voltage levels of
the Self-Timed Erase or Write for V
V
is added. The T
conditions column are changed. The changed/
appended values are indicated in bold text in the
following table:
DDCORE
† Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. These parameters are for design guidance
E
V
T
I
T
DDP
Sym
IW
IE
RETD
WE
P
PR
PEW
only and are not tested.
Corrections are shown in bold. Where
possible, the original bold text formatting
has been removed for clarity.
, are included. A new parameter (D133B)
Programming Requirements
Program Flash Memory
Cell Endurance
V
Voltage for Self-Timed Erase or
Write
Self-Timed Write Cycle Time
Self-Timed Page Erase Cycle
Time
Characteristic Retention
Supply Current during
Programming
Writes per Erase Cycle
MEMORY PROGRAMMING REQUIREMENTS
DD
for Read
WE
V
V
DD
DDCORE
Characteristic
parameter number and
DD
and
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  T
V
2.35
2.25
10K
Min
20
—
—
—
—
MIN
PIC18F87J11 FAMILY
Typ†
33.0
2.8
—
—
—
—
—
—
3
Max
3.6
3.6
2.7
14
—
—
—
—
1
Units
Year Provided no other
E/W -40C to +85C
mA
ms
ms
—
V
V
V
A
 +85°C for industrial
V
voltage
ENVREG tied to V
ENVREG tied to V
specifications are violated
For each physical address
MIN
= Minimum operating
Conditions
DS80495D-page 5
DD
SS