PIC18F2331-E/SP Microchip Technology, PIC18F2331-E/SP Datasheet - Page 341
![IC MCU FLASH 4KX16 28-DIP](/photos/6/59/65908/150-28-dip_sml.jpg)
PIC18F2331-E/SP
Manufacturer Part Number
PIC18F2331-E/SP
Description
IC MCU FLASH 4KX16 28-DIP
Manufacturer
Microchip Technology
Series
PIC® 18Fr
Datasheets
1.PIC16F616T-ISL.pdf
(8 pages)
2.PIC16F818-ISO.pdf
(6 pages)
3.PIC18F2331-ISO.pdf
(392 pages)
4.PIC18F2331-ISO.pdf
(8 pages)
5.PIC18F2331-ISO.pdf
(6 pages)
6.PIC18F2331-ISO.pdf
(16 pages)
7.PIC18F4331-EP.pdf
(400 pages)
Specifications of PIC18F2331-E/SP
Core Size
8-Bit
Program Memory Size
8KB (4K x 16)
Core Processor
PIC
Speed
40MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, LVD, Power Control PWM, QEI, POR, PWM, WDT
Number Of I /o
24
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
768 x 8
Voltage - Supply (vcc/vdd)
4.2 V ~ 5.5 V
Data Converters
A/D 5x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
28-DIP (0.300", 7.62mm)
Controller Family/series
PIC18
No. Of I/o's
24
Eeprom Memory Size
256Byte
Ram Memory Size
768Byte
Cpu Speed
40MHz
No. Of Timers
4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
I3-DB18F4431 - BOARD DAUGHTER ICEPIC3AC164035 - MODULE SKT FOR 18F2X31 28SOICDVA18XP280 - DEVICE ADAPTER 18F2220 PDIP 28LD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
- PIC16F616T-ISL PDF datasheet
- PIC16F818-ISO PDF datasheet #2
- PIC18F2331-ISO PDF datasheet #3
- PIC18F2331-ISO PDF datasheet #4
- PIC18F2331-ISO PDF datasheet #5
- PIC18F2331-ISO PDF datasheet #6
- PIC18F4331-EP PDF datasheet #7
- Current page: 341 of 392
- Download datasheet (4Mb)
TABLE 26-1:
2010 Microchip Technology Inc.
DC CHARACTERISTICS
D110
D112
D113
D120
D121
D122
D123
D124
D130
D131
D132
D132A V
D132B V
D133
D133A T
D133A T
D134
Note 1:
Param
No.
2:
3:
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
V
I
I
E
V
T
T
T
E
V
V
T
T
PP
DDP
Sym
RETD
REF
IE
IW
IW
RETD
PP
D
DRW
DEW
P
PR
IE
IW
PEW
only and are not tested.
These specifications are for programming the on-chip program memory through the use of table write
instructions.
Refer to
endurance.
Required only if Single-Supply Programming is disabled.
Internal Program Memory
Programming Specifications
Voltage on MCLR/V
Current into MCLR/V
Supply Current during
Programming
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Program Flash Memory
Cell Endurance
V
V
V
or Write
V
ICSP™ Block Erase Cycle Time
ICSP Erase or Write Cycle Time
(externally timed)
Self-Timed Write Cycle Time
Characteristic Retention
MEMORY PROGRAMMING REQUIREMENTS
DD
DD
DD
DD
DD
Section 7.9 “Using the Data EEPROM”
for Read/Write
for Read
for Block Erase
for Externally Timed Erase
for Self-Timed Write
Characteristic
PP
PP
(2)
pin
pin
PIC18F2331/2431/4331/4431
(1)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C T
100K
V
V
V
9.00
10K
Min
1M
4.5
4.5
40
40
—
—
—
—
—
MIN
MIN
MIN
1
for a more detailed discussion on data EEPROM
100K
Typ†
10M
100
1M
—
—
—
—
—
—
—
—
—
—
4
4
2
13.25
Max
300
5.5
5.5
5.5
5.5
5.5
—
—
—
—
—
—
—
—
—
1
-40°C T
Units
Year Provided no other
Year Provided no other
E/W -40C to +85C
E/W -40°C to +85°C
E/W -40C to +85C
mA
A
ms
ms
ms
ms
V
V
V
V
V
V
A
A
+125°C for extended
+85°C for industrial
(Note 3)
Using EECON to read/write
V
voltage
specifications are violated
V
voltage
Using ICSP™ port
Using ICSP port
V
voltage
V
V
specifications are violated
MIN
MIN
MIN
DD
DD
> 4.5V
> 4.5V
= Minimum operating
= Minimum operating
= Minimum operating
Conditions
DS39616D-page 341
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