ATTINY861-20MU Atmel, ATTINY861-20MU Datasheet - Page 177
![IC MCU AVR 8K FLASH 20MHZ 32-QFN](/photos/12/32/123217/attiny861-20mu_sml.jpg)
ATTINY861-20MU
Manufacturer Part Number
ATTINY861-20MU
Description
IC MCU AVR 8K FLASH 20MHZ 32-QFN
Manufacturer
Atmel
Series
AVR® ATtinyr
Specifications of ATTINY861-20MU
Core Processor
AVR
Core Size
8-Bit
Speed
20MHz
Connectivity
USI
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
16
Program Memory Size
8KB (4K x 16)
Program Memory Type
FLASH
Eeprom Size
512 x 8
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 11x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
32-VQFN Exposed Pad, 32-HVQFN, 32-SQFN, 32-DHVQFN
Processor Series
ATTINY8x
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
512 B
Interface Type
2-Wire, SPI, USI
Maximum Clock Frequency
20 MHz
Number Of Programmable I/os
16
Number Of Timers
2
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWAVR, EWAVR-BL
Development Tools By Supplier
ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT, ATAVRMC320
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 11 Channel
Package
32MLF EP
Device Core
AVR
Family Name
ATtiny
Maximum Speed
20 MHz
Operating Supply Voltage
3.3|5 V
For Use With
ATSTK600 - DEV KIT FOR AVR/AVR32ATAVRBC100 - REF DESIGN KIT BATTERY CHARGER770-1007 - ISP 4PORT ATMEL AVR MCU SPI/JTAG
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ATTINY861-20MU
Manufacturer:
LT
Quantity:
2 140
Part Number:
ATTINY861-20MU
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
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Figure 18-2. Serial Programming Instruction example
18.7
18.7.1
2588E–AVR–08/10
Byte 1
Parallel Programming
Signal Names
Load Program Memory Page (High/Low Byte)/
Load EEPROM Memory Page (page access)
Bit 15 B
Byte 2
Adr MSB
Adr dr M
A
r MS S B
If the LSB in RDY/BSY data byte out is ‘1’, a programming operation is still pending. Wait until
this bit returns ‘0’ before the next instruction is carried out.
Within the same page, the low data byte must be loaded prior to the high data byte.
After data is loaded to the page buffer, program the EEPROM page, see
177.
This section describes how to parallel program and verify Flash Program memory, EEPROM
Data memory, Memory Lock bits, and Fuse bits. Pulses are assumed to be at least 250 ns in
length, unless otherwise noted.
In this section, some pins are referenced by signal names describing their functionality during
parallel programming, see
are referenced by pin names.
Byte 3
Adr LSB
Page Offset
0
Serial Programming Instruction
Byte 4
Program Memory/
EEPROM Memory
Figure 18-3
Page Buffer
Page N-1
Page 0
Page 1
Page 2
and
Byte 1
Table
Page Number
18-12. Pins not described in the following table
Bit 15 B
Byte 2
Write Program Memory Page/
Write EEPROM Memory Page
Adr MSB
Byte 3
Adr LSB
A A dr dr LS
LSB
SB
Figure 18-2 on page
0
Byte 4
177
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