PIC16F648A-E/P Microchip Technology, PIC16F648A-E/P Datasheet - Page 133

• Manufacturer Part Number: PIC16F648A-E/P
• Description: IC MCU FLASH 4KX14 EEPROM 18DIP
• Manufacturer: Microchip Technology
• Series: PIC® 16Fr

Specifications of PIC16F648A-E/P

• Program Memory Type: FLASH
• Program Memory Size: 7KB (4K x 14)
• Package / Case: 18-DIP (0.300", 7.62mm)
• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 20MHz
• Connectivity: UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 16
• Eeprom Size: 256 x 8
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Processor Series: PIC16F
• Core: PIC
• Data Bus Width: 8 bit
• Data Ram Size: 256 B
• Interface Type: SCI/USART
• Maximum Clock Frequency: 20 MHz
• Number Of Programmable I/os: 16
• Number Of Timers: 3
• Operating Supply Voltage: 2 V to 5.5 V
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• 3rd Party Development Tools: 52715-96, 52716-328, 52717-734
• Development Tools By Supplier: PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, DM163014, DM164120-4
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: I3DBF648 - BOARD DAUGHTER ICEPIC3AC162053 - HEADER INTERFACE ICD,ICD2 18DIPACICE0202 - ADAPTER MPLABICE 18P 300 MIL
• Data Converters: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

17.0
Absolute Maximum Ratings(†)
Ambient temperature under bias................................................................................................................. -40 to +125°C
Storage temperature .............................................................................................................................. -65°C to +150°C
Voltage on V
Voltage on MCLR and RA4 with respect to V
Voltage on all other pins with respect to V
Total power dissipation
Maximum current out of V
Maximum current into V
Input clamp current, I
Output clamp current, I
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin ....................................................................................................25 mA
Maximum current sunk by PORTA and PORTB (Combined)................................................................................200 mA
Maximum current sourced by PORTA and PORTB (Combined)...........................................................................200 mA
Note 1: Power dissipation is calculated as follows: P
 2004 Microchip Technology Inc.
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Note:
ELECTRICAL SPECIFICATIONS
Voltage spikes below V
Thus, a series resistor of 50-100
pulling this pin directly to V
DD
with respect to V
IK
(1)
OK
(V
DD
.....................................................................................................................................800 mW
I
SS
(Vo < 0 or Vo >V
< 0 or V
pin ..............................................................................................................................250 mA
pin ...........................................................................................................................300 mA
SS
I
SS
> V
............................................................................................................ -0.3 to +6.5V
SS
at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up.
DD
.
SS
)
DD
SS
....................................................................................-0.3V to V
)
should be used when applying a “low” level to the MCLR pin rather than
............................................................................................-0.3 to +14V
Preliminary
DIS
PIC16F627A/628A/648A
= V
DD
x {I
DD
- ∑ I
OH
} + ∑ {(V
DD
-V
OH
) x I
OH
DS40044B-page 131
} + ∑(V
O
DD
l x I
+ 0.3V
20 mA
20 mA
OL
)