PIC12F675-E/P Microchip Technology, PIC12F675-E/P Datasheet - Page 85
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PIC12F675-E/P
Manufacturer Part Number
PIC12F675-E/P
Description
IC MCU CMOS 1K FLASH W/AD 8-DIP
Manufacturer
Microchip Technology
Series
PIC® 12Fr
Datasheets
1.PIC12F629T-ISN.pdf
(136 pages)
2.PIC12F629T-ISN.pdf
(8 pages)
3.PIC12F629T-ISN.pdf
(24 pages)
4.PIC12F675-ESN.pdf
(132 pages)
Specifications of PIC12F675-E/P
Program Memory Type
FLASH
Program Memory Size
1.75KB (1K x 14)
Package / Case
8-DIP (0.300", 7.62mm)
Core Processor
PIC
Core Size
8-Bit
Speed
20MHz
Peripherals
POR, WDT
Number Of I /o
5
Eeprom Size
128 x 8
Ram Size
64 x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Data Converters
A/D 4x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Processor Series
PIC12F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
64 B
Interface Type
RS- 232, USB
Maximum Clock Frequency
20 MHz
Number Of Programmable I/os
6
Number Of Timers
8
Maximum Operating Temperature
+ 125 C
Mounting Style
Through Hole
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 53270-913
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, DM163014, DM164120-4
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 4 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
DM163029 - BOARD PICDEM FOR MECHATRONICSAC124001 - MODULE SKT PROMATEII 8DIP/SOIC
Connectivity
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PIC12F675-E/P
Manufacturer:
Microchip Technology
Quantity:
1 849
Company:
Part Number:
PIC12F675-E/P
Manufacturer:
TEKMOS
Quantity:
6 238
12.0
Absolute Maximum Ratings†
Ambient temperature under bias........................................................................................................... -40 to +125°C
Storage temperature ........................................................................................................................ -65°C to +150°C
Voltage on V
Voltage on MCLR with respect to Vss ..................................................................................................-0.3 to +13.5V
Voltage on all other pins with respect to V
Total power dissipation
Maximum current out of V
Maximum current into V
Input clamp current, I
Output clamp current, I
Maximum output current sunk by any I/O pin.................................................................................................... 25 mA
Maximum output current sourced by any I/O pin .............................................................................................. 25 mA
Maximum current sunk by all GPIO ................................................................................................................ 125 mA
Maximum current sourced all GPIO ................................................................................................................ 125 mA
Note 1: Power dissipation is calculated as follows: P
2003 Microchip Technology Inc.
† NOTICE: Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Note:
ELECTRICAL SPECIFICATIONS
Voltage spikes below V
a series resistor of 50-100
this pin directly to V
DD
with respect to V
IK
(1)
OK
(V
DD
............................................................................................................................... 800 mW
SS
I
(Vo < 0 or Vo >V
< 0 or V
pin ........................................................................................................................ 250 mA
pin ..................................................................................................................... 300 mA
SS
SS
.
SS
I
> V
..................................................................................................... -0.3 to +6.5V
at the MCLR pin, inducing currents greater than 80 mA, may cause latchup. Thus,
Ω
DD
should be used when applying a "low" level to the MCLR pin, rather than pulling
SS
)...............................................................................................................± 20 mA
DD
........................................................................... -0.3V to (V
).........................................................................................................± 20 mA
DIS
= V
DD
x {I
DD
- ∑ I
OH
} + ∑ {(V
PIC12F629/675
DD
-V
OH
) x I
OH
DS41190C-page 83
} + ∑(V
DD
+ 0.3V)
O
l x I
OL
).