ATTINY261A-XUR Atmel, ATTINY261A-XUR Datasheet - Page 177

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ATTINY261A-XUR

Manufacturer Part Number
ATTINY261A-XUR
Description
MCU AVR 2KB FLASH 20MHZ 20TSSOP
Manufacturer
Atmel
Series
AVR® ATtinyr
Datasheet

Specifications of ATTINY261A-XUR

Core Processor
AVR
Core Size
8-Bit
Speed
20MHz
Connectivity
USI
Peripherals
Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Number Of I /o
16
Program Memory Size
2KB (1K x 16)
Program Memory Type
FLASH
Eeprom Size
128 x 8
Ram Size
128 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 11x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATTINY261A-XUR
Manufacturer:
Atmel
Quantity:
5 990
18.7.2
18.7.3
18.7.4
18.7.5
8197B–AVR–01/10
Entering Programming Mode
Considerations for Efficient Programming
Chip Erase
Programming the Flash
The following algorithm puts the device in parallel programming mode:
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered:
The Chip Erase will erase the Flash and EEPROM memories plus lock bits. The Lock bits are
not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are
reprogrammed.
Note:
The Flash is organized in pages, see
the program data is latched into a page buffer. This allows one page of program data to be pro-
grammed simultaneously. The following procedure describes how to program the entire Flash
memory (see
1. Apply 4.5 - 5.5V between V
2. Set RESET to “0” and toggle XTAL1 at least six times.
3. Set Prog_enable pins listed in
4. Apply 11.5 - 12.5V to RESET. Any activity on Prog_enable pins within 100 ns after
5. Wait at least 50 µs before sending a new command.
• The command needs only be loaded once when writing or reading multiple memory
• Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the
• Address high byte needs only be loaded before programming or reading a new 256 word
1. Load Command “Chip Erase”:
locations.
EESAVE Fuse is programmed) and Flash after a Chip Erase.
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
ns.
+12V has been applied to RESET, will cause the device to fail entering programming
mode.
a. Set XA1, XA0 to “10”. This enables command loading.
b. Set BS1 to “0”.
c. Set DATA to “1000 0000”. This is the command for Chip Erase.
d. Give XTAL1 a positive pulse. This loads the command.
e. Give WR a negative pulse. This starts the Chip Erase. RDY/BSY goes low.
f.
The EEPROM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
Wait until RDY/BSY goes high before loading a new command.
Figure 18-5
for signal waveforms):
CC
and GND.
Table 18-13 on page 176
Table 18-7 on page
170. When programming the Flash,
to “0000” and wait at least 100
177

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