PIC16F676-E/P Microchip Technology, PIC16F676-E/P Datasheet - Page 94
PIC16F676-E/P
Manufacturer Part Number
PIC16F676-E/P
Description
IC MCU FLASH 1KX14 W/AD 14DIP
Manufacturer
Microchip Technology
Series
PIC® 16Fr
Datasheets
1.PIC16F616T-ISL.pdf
(8 pages)
2.PIC12F629T-ISN.pdf
(24 pages)
3.PIC16F630-ISL.pdf
(132 pages)
4.PIC16F630-ISL.pdf
(2 pages)
5.PIC16F630-ISL.pdf
(10 pages)
6.PIC16F676-EP.pdf
(132 pages)
Specifications of PIC16F676-E/P
Program Memory Type
FLASH
Program Memory Size
1.75KB (1K x 14)
Package / Case
14-DIP (0.300", 7.62mm)
Core Processor
PIC
Core Size
8-Bit
Speed
20MHz
Peripherals
Brown-out Detect/Reset, POR, WDT
Number Of I /o
12
Eeprom Size
128 x 8
Ram Size
64 x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Processor Series
PIC16F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
64 B
Interface Type
RS- 232/USB
Maximum Clock Frequency
20 MHz
Number Of Programmable I/os
12
Number Of Timers
2
Operating Supply Voltage
2 V to 5.5 V
Maximum Operating Temperature
+ 125 C
Mounting Style
Through Hole
3rd Party Development Tools
52715-96, 52716-328, 52717-734
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, DM163014, DM164120-4
Minimum Operating Temperature
- 40 C
On-chip Adc
8-ch x 10-bit
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
DM163029 - BOARD PICDEM FOR MECHATRONICS
Connectivity
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
PIC16F630/676
12.7
DS40039F-page 94
DC CHARACTERISTICS
D100
D101
D120
D120A
D121
D122
D123
D124
D130
D130A
D131
D132
D133
D134
Param
Note 1: See Section 8.5.1 for additional information.
No.
†
DC Characteristics: PIC16F630/676-I (Industrial), PIC16F630/676-E (Extended)
(Cont.)
*
C
C
E
E
V
T
T
T
E
E
V
V
T
T
These parameters are characterized but not tested.
Data in ‘Typ’ column is at 5.0V, 25C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Sym
DEW
RETD
REF
PEW
RETD
D
D
DRW
P
D
PR
PEW
OSC2
IO
Capacitive Loading Specs
on Output Pins
OSC2 pin
All I/O pins
Data EEPROM Memory
Byte Endurance
Byte Endurance
V
Erase/Write cycle time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Program Flash Memory
Cell Endurance
Cell Endurance
V
V
Erase/Write cycle time
Characteristic Retention
DD
DD
DD
for Read/Write
for Read
for Erase/Write
Characteristic
(1)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C T
100K
V
V
Min
10K
10K
1M
4.5
1K
40
40
—
—
—
—
MIN
MIN
Typ†
100K
100K
10M
10K
1M
—
—
—
—
—
—
—
5
2
Max
15*
50*
5.5
5.5
5.5
2.5
—
—
—
—
—
—
—
6
-40°C T
Units
Year Provided no other specifications
Year Provided no other specifications
E/W -40C T
E/W +85°C T
E/W -40C T
E/W -40C T
E/W +85°C T
ms
ms
pF
pF
V
V
V
A
A
In XT, HS and LP modes when
external clock is used to drive
OSC1
Using EECON to read/write
V
voltage
are violated
V
voltage
are violated
+85°C for industrial
+125°C for extended
2010 Microchip Technology Inc.
MIN
MIN
= Minimum operating
= Minimum operating
A
A
A
Conditions
A
A
+85°C
+85°C
+85°C
+125°C
+125°C