PIC12F508-E/SN Microchip Technology, PIC12F508-E/SN Datasheet - Page 72
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PIC12F508-E/SN
Manufacturer Part Number
PIC12F508-E/SN
Description
IC MCU FLASH 512X12 8SOIC
Manufacturer
Microchip Technology
Series
PIC® 12Fr
Datasheets
1.PIC12F509T-ISN.pdf
(110 pages)
2.PIC12F509T-ISN.pdf
(4 pages)
3.PIC12F509T-ISN.pdf
(20 pages)
Specifications of PIC12F508-E/SN
Core Size
8-Bit
Program Memory Size
768B (512 x 12)
Core Processor
PIC
Speed
4MHz
Peripherals
POR, WDT
Number Of I /o
5
Program Memory Type
FLASH
Ram Size
25 x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
8-SOIC (3.9mm Width)
Controller Family/series
PIC12
No. Of I/o's
6
Ram Memory Size
25Byte
Cpu Speed
4MHz
No. Of Timers
1
Digital Ic Case Style
SOIC
Processor Series
PIC12F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
25 B
Interface Type
RS- 232, USB
Maximum Clock Frequency
4 MHz
Number Of Programmable I/os
6
Number Of Timers
1
Operating Supply Voltage
2 V to 5.5 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, DV164101, DM163014, DV164120, DM163029
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
AC162059 - HEADER INTRFC MPLAB ICD2 8/14PIN
Eeprom Size
-
Data Converters
-
Connectivity
-
Lead Free Status / Rohs Status
Details
PIC12F508/509/16F505
10.2
DS41236E-page 72
DC Characteristics
D001
D002
D003
D004
D010
D020
D022
Note 1:
Param
No.
2:
3:
4:
5:
*
DC Characteristics: PIC12F508/509/16F505 (Extended)
V
S
Sym.
I
V
V
I
WDT
I
POR
VDD
DD
PD
These parameters are characterized but not tested.
guidance only and is not tested.
This is the limit to which V
The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus
loading, oscillator type, bus rate, internal code execution pattern and temperature also have an impact on
the current consumption.
The test conditions for all I
OSC1 = external square wave, from rail-to-rail; all I/O pins tri-stated, pulled to V
V
For standby current measurements, the conditions are the same as IDD, except that the device is in Sleep
mode. If a module current is listed, the current is for that specific module enabled and the device in Sleep.
DD
DR
Data in the Typical (“Typ”) column is based on characterization results at 25°C. This data is for design
DD
; WDT enabled/disabled as specified.
Supply Voltage
RAM Data Retention Voltage
V
Power-on Reset
V
Power-on Reset
Supply Current
Power-down Current
WDT Current
DD
DD
Start Voltage to ensure
Rise Rate to ensure
Characteristic
(5)
(3,4)
DD
DD
(5)
can be lowered in Sleep mode without losing RAM data.
measurements in active operation mode are:
(2)
Standard Operating Conditions (unless otherwise specified)
Operating Temperature -40°C ≤ T
0.05*
Min.
2.0
—
—
—
—
—
—
—
—
—
—
—
—
Typ
0.625
0.35
1.5*
Vss
175
500
1.5
0.1
1.0
7.0
11
38
—
(1)
Max.
15.0
275
650
110
5.5
1.1
2.2
9.0
26
18
22
—
—
—
Units
V/ms
mA
mA
μA
μA
μA
μA
μA
μA
μA
μA
V
V
V
See Figure 10-1
Device in Sleep mode
See Section 7.4 "Power-on
Reset (POR)" for details
See Section 7.4 "Power-on
Reset (POR)" for details
F
F
F
F
(PIC16F515 only)
F
F
V
V
V
V
OSC
OSC
OSC
OSC
OSC
OSC
A
DD
DD
DD
DD
≤ +125°C (extended)
© 2009 Microchip Technology Inc.
= 2.0V
= 5.0V
= 2.0V
= 5.0V
= 4 MHz, V
= 4 MHz, V
= 10 MHz, V
= 20 MHz, V
= 32 kHz, V
= 32 kHz, V
SS
, T0CKI = V
Conditions
DD
DD
DD
DD
DD
DD
= 2.0V
= 5.0V
DD
= 2.0V
= 5.0V
= 3.0V
= 5.0V
, MCLR =