M30853FJFP#U3 Renesas Electronics America, M30853FJFP#U3 Datasheet - Page 93

• Manufacturer Part Number: M30853FJFP#U3
• Description: IC M32C MCU FLASH 512K 100QFP
• Manufacturer: Renesas Electronics America
• Series: M16C™ M32C/80r

Specifications of M30853FJFP#U3

• Core Processor: M32C/80
• Core Size: 16/32-Bit
• Speed: 32MHz
• Connectivity: CAN, I²C, IEBus, SIO, UART/USART
• Peripherals: DMA, WDT
• Number Of I /o: 85
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 24K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 26x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-QFP
• For Use With: R0K330879S001BE - KIT DEV RSK M32C/87R0K330879S000BE - KIT DEV RSK M32C/87
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Rev.
1.21 Jul.01, 2005
Date
REVISION HISTORY
All pages Package code changed: 144P6Q-A to PLQP0144KA-A, 100P6Q-A to
All pages "Low Voltage Detection Reset" changed to "Brown-out Detection Reset"
Page
65
77
80
27
39
47
51
53
59
60
65
70
71
76
80
• Table 5.28 Memory Expansion Mode and Microprocessor Mode tac1
• Table 5.44 Electrical Characteristics I
• Table 5.47 Flash Memory Electrical Characteristics Topr value modified
PLQP0100KB-A, 100P6S-A to PRQP0100JB-A
Special Function Register (SFR)
• The G0RB register Value after reset modified
• The TCSPR register Value after reset modified
Electrical Characteristics
• Table 5.2 Electrical Characteristics Parameter f
• Table 5.6 Flash Memory Version Electrical Characteristics Mesurement
• Table 5.10 Memory Expansion Mode and Microprocessor Mode
• Figure 5.3 V
• Figure 5.4 V
• Table 5.28 Memory Expansion Mode and Microprocessor Mode
• Figure 5.7 V
• Figure 5.8 V
• Table 5.43 Electrical Characteristics Parameter f
• Table 5.47 Flash Memory Version Electrical Characteristics Mesurement
expression modified
condition changed
expression on Note 1 modified;
modified;
1 modified;
added
expression on Note 1 modified;
modified;
Note 1 modified;
expression on Note 2 modified;
condition changed
tcyc
tcyc
th
CC1
CC1
CC1
CC1
(ALE-AD)
expression added
expression added
=V
=V
=V
=V
M32C/85 Group (M32C/85, M32C/85T) Datasheet
th
CC2
CC2
(ALE-AD)
CC2
CC2
A-4
expressions on Notes 1 and 2 modified;
=5V Timing Diagram (2)
=3.3V Timing Diagram (1)
=5V Timing Diagram (1)
=3.3V Timing Diagram (2)
Description
expressions on Notes 1 and 2 modified;
tac
tac
tcyc
Summary
2(RD-DB)
2(RD-DB)
expression added
CC
expression on Note 1 added
expression on Note 1 added
standard value revised
tac
tw
(BCLK)
tw
2(AD-DB)
(BCLK)
(ER)
tac
(ER)
2(RD-DB)
and its values added
expression on Note 3
expression on Note 3
and its values added
expression on Note
tcyc
expression on
expression
tac
tac
th
1(RD-DB)
1(RD-DB)
(WR-CS)
(AD-DB)