C8051F574-IM Silicon Laboratories Inc, C8051F574-IM Datasheet - Page 45
C8051F574-IM
Manufacturer Part Number
C8051F574-IM
Description
IC 8051 MCU 16K FLASH 40-QFN
Manufacturer
Silicon Laboratories Inc
Series
C8051F57xr
Specifications of C8051F574-IM
Program Memory Type
FLASH
Program Memory Size
16KB (16K x 8)
Package / Case
40-QFN
Core Processor
8051
Core Size
8-Bit
Speed
50MHz
Connectivity
EBI/EMI, SMBus (2-Wire/I²C), LIN, SPI, UART/USART
Peripherals
POR, PWM, Temp Sensor, WDT
Number Of I /o
33
Ram Size
2.25K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.25 V
Data Converters
A/D 32x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Processor Series
C8051F5x
Core
8051
Data Bus Width
8 bit
Data Ram Size
2304 B
Maximum Clock Frequency
50 MHz
Number Of Programmable I/os
33
Operating Supply Voltage
1.8 V to 5.25 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
3rd Party Development Tools
PK51, CA51, A51, ULINK2
Development Tools By Supplier
C8051F560DK
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
336-1691 - KIT DEVELOPMENT FOR C8051F560
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-1715-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
C8051F574-IM
Manufacturer:
Silicon Labs
Quantity:
135
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Table 5.10. Temperature Sensor Electrical Characteristics
VDDA
Table 5.11. Voltage Reference Electrical Characteristics
VDDA
Linearity
Slope
Slope Error*
Offset
Offset Error*
Power Supply Current
Tracking Time
*Note: Represents one standard deviation from the mean.
Internal Reference (REFBE = 1)
Output Voltage
VREF Short-Circuit Current
VREF Temperature
Coefficient
Power Consumption
Load Regulation
VREF Turn-on Time 1
VREF Turn-on Time 2
Power Supply Rejection
External Reference (REFBE = 0)
Input Voltage Range
Input Current
Power Specifications
Reference Bias Generator
= 1.8 to 2.75 V, –40 to +125 °C unless otherwise specified.
= 1.8 to 2.75 V, –40 to +125 °C unless otherwise specified.
Parameter
Parameter
25 °C ambient (REFLV = 0)
25 °C ambient (REFLV = 1), V
Internal
Load = 0 to 200 µA to AGND
4.7 µF tantalum and 0.1 µF bypass
0.1 µF bypass
Sample Rate = 200 ksps; VREF = 1.5 V
REFBE = 1 or TEMPE = 1
Temp = 0 °C
Temp = 0 °C
Conditions
Conditions
Rev. 1.1
DD
= 2.6 V
C8051F55x/56x/57x
Min
12
—
—
—
—
—
—
1.45
2.15
Min
1.5
—
—
—
—
—
—
—
—
—
±0.1
3.33
Typ
856
±14
88
18
—
1.50
2.20
Typ
1.5
1.2
2.1
38
30
46
21
—
5
3
Max
—
—
—
—
—
—
—
V
Max
1.55
2.25
10
—
50
—
—
—
—
DDA
—
40
mV/°C
µV/°C
Units
ppm/°C
µV/µA
mV
mV
Units
mV/V
µA
°C
µs
mA
ms
µA
µA
µA
µs
V
V
45
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