STR711FR2H6 STMicroelectronics, STR711FR2H6 Datasheet - Page 46

MCU 32BIT 256KB FLASH 64-LFBGA

STR711FR2H6

Manufacturer Part Number
STR711FR2H6
Description
MCU 32BIT 256KB FLASH 64-LFBGA
Manufacturer
STMicroelectronics
Series
STR7r
Datasheet

Specifications of STR711FR2H6

Core Processor
ARM7
Core Size
32-Bit
Speed
66MHz
Connectivity
HDLC, I²C, SmartCard, SPI, UART/USART, USB
Peripherals
PWM, WDT
Number Of I /o
30
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
64K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 4x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-LFBGA
Processor Series
STR711x
Core
ARM7TDMI
Data Bus Width
32 bit
Data Ram Size
64 KB
Interface Type
USB
Maximum Clock Frequency
66 MHz
Number Of Programmable I/os
30
Number Of Timers
4
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWARM, EWARM-BL, MCBSTR7, KSK-STR711-PL, MDK-ARM, RL-ARM, ULINK2
Development Tools By Supplier
STR710-SK/HIT, STR711-SK/IAR, STR712-SK/IAR, STR71X-SK/RAIS, STX-PRO/RAIS, STX-RLINK, STR79-RVDK/CPP, STR79-RVDK, STR79-RVDK/UPG
Minimum Operating Temperature
- 40 C
On-chip Adc
12 bit, 4 Channel
For Use With
MCBSTR7UME - MCBSTR7 + ULINK-ME DEV KITMCBSTR7 - BOARD EVAL STM STR71X SERIES497-5046 - KIT TOOL FOR ST7/UPSD/STR7 MCU497-4550 - KIT IAR STARTER STR711/STR712
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details
Other names
497-5643

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STR711FR2H6
Manufacturer:
ST
Quantity:
201
Part Number:
STR711FR2H6
Manufacturer:
STMicroelectronics
Quantity:
10 000
Electrical parameters
4.3.3
46/78
Memory characteristics
Flash memory
V
Table 24.
Notes:
1. T
2. Guaranteed by design, not tested in production
N
N
Symbol
33
t
t
t
END_B0
END_B1
t
RPD
PSL
ESL
t
t
t
t
t
PDW
t
t
t
t
ESR
PB0
PB1
RET
PW
= 3.0 to 3.6V, T
ES
ES
ES
ES
A
=45°C after 0 cycles. Guaranteed by characterization, not tested in production.
2)
2)
2)
Word Program
Double Word Program
Bank 0 Program (256K)
Bank 1 Program (16K)
Sector Erase (64K)
Sector Erase (8K)
Bank 0 Erase (256K)
Bank 1 Erase (16K)
Recovery when disabled
Program Suspend Latency
Erase Suspend Latency
Endurance (Bank 0
sectors)
Endurance (Bank 1
sectors)
Data Retention (Bank 0
and Bank 1)
Erase Suspend Rate
Flash memory characteristics
Parameter
A
= -40 to 85 °C unless otherwise specified.
Double Word Program
Double Word Program
Not preprogrammed
Preprogrammed
Not preprogrammed
Preprogrammed
Not preprogrammed
Preprogrammed
Not preprogrammed
Preprogrammed
T
Min time from Erase
Resume to next Erase
Suspend
A
=85°
Test conditions
Min.
100
10
20
20
Value
Typ
130
1.6
1.9
0.7
0.6
8.0
6.6
0.9
0.8
2.3
40
60
Max
13.7
11.2
170
300
2.1
4.0
3.3
1.1
1.0
1.5
1.3
20
10
1)
STR71xF
kcycles
kcycles
Years
ms
Unit
ms
µs
µs
µs
µs
µs
s
s
s
s
s

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