STR715FR0T6 STMicroelectronics, STR715FR0T6 Datasheet - Page 50
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STR715FR0T6
Manufacturer Part Number
STR715FR0T6
Description
MCU 32BIT 64KB FLASH 64-LQFP
Manufacturer
STMicroelectronics
Series
STR7r
Datasheet
1.RLINK-ST.pdf
(78 pages)
Specifications of STR715FR0T6
Core Processor
ARM7
Core Size
32-Bit
Speed
66MHz
Connectivity
I²C, HDLC, Smartcard, SPI, UART/USART
Peripherals
PWM, WDT
Number Of I /o
32
Program Memory Size
64KB (64K x 8 + 16K)
Program Memory Type
FLASH
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 4x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-LQFP
Processor Series
STR715x
Core
ARM7TDMI
Data Bus Width
32 bit
Data Ram Size
16 KB
Maximum Clock Frequency
16 MHz
Number Of Programmable I/os
32
Number Of Timers
4
Operating Supply Voltage
3 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWARM, EWARM-BL, MCBSTR7, MDK-ARM, RL-ARM, ULINK2
Development Tools By Supplier
STR710-SK/HIT, STR711-SK/IAR, STR712-SK/IAR, STR71X-SK/RAIS, STX-PRO/RAIS, STX-RLINK, STR79-RVDK/CPP, STR79-RVDK, STR79-RVDK/UPG
Minimum Operating Temperature
- 40 C
On-chip Adc
12 bit, 4 Channel
For Use With
MCBSTR7UME - MCBSTR7 + ULINK-ME DEV KIT497-6412 - BOARD EVAL STPM01/STR715FR0MCBSTR7 - BOARD EVAL STM STR71X SERIES
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Other names
497-4888
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STR715FR0T6
Manufacturer:
SGS
Quantity:
5 166
Company:
Part Number:
STR715FR0T6
Manufacturer:
STMicroelectronics
Quantity:
10 000
Part Number:
STR715FR0T6
Manufacturer:
ST
Quantity:
20 000
Electrical parameters
4.3.5
50/78
I/O port pin characteristics
General characteristics
Subject to general operating conditions for V
unused pins must be kept at a fixed voltage: using the output mode of the I/O for example or
an external pull-up or pull-down resistor.
Table 29.
Notes:
1. Data based on characterization results, not tested in production.
2. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested.
3. When the current limitation is not possible, the V
4. Leakage could be higher than max. if negative current is injected on adjacent pins.
5. The R
ΣI
Symbol
I
INJ(PIN)
INJ(PIN)
V
V
R
R
refer to I
induced by V
I
C
V
V
V
V
V
V
I
PU
3)
lkg
hys
hys
PU
PD
IH
IH
IH
IO
IL
IL
IL
and I
PU
INJ(PIN)
PD
Input low level voltage
Input high level voltage
Schmitt trigger voltage hysteresis
2)
Input low level voltage
Input high level voltage
Schmitt trigger voltage hysteresis
2)
Input low level voltage
Input high level voltage
Injected Current on any I/O pin
Total injected current (sum of all
I/O and control pins)
Input leakage current
Weak pull-up equivalent
resistor
Weak pull-down equivalent
resistor
I/O pin capacitance
pull-up and R
current characteristics described in
I/O static characteristics
IN
<V
specification. A positive injection is induced by V
5)
5)
SS
. Refer to
Parameter
PD
pull-down equivalent resistor are based on a resistive transistor (corresponding
Section 4.2 on page 34
4)
1)
1)
1)
1)
1)
1)
Figure 18
IN
CMOS ports
P0.15 WAKEUP
TTL ports
V
V
V
SS
IN
IN
absolute maximum rating must be respected, otherwise
33
=
=
Conditions
≤
V
V
V
for more details.
and T
SS
33
IN
≤
to
V
Figure
33
A
unless otherwise specified. All
IN
>V
19).
33
while a negative injection is
0.7V
Min
110
110
2.0
2
33
1.35
Typ
150
150
0.8
0.9
0.4
5
0.3V
Max
± 25
700
700
0.8
0.8
± 4
±1
33
STR71xF
Unit
mA
µA
kΩ
kΩ
pF
V
V
V
V
V