MC9S12DB128CFUE Freescale Semiconductor, MC9S12DB128CFUE Datasheet - Page 103

IC MCU 128K FLASH 2K EE 80-QFP

MC9S12DB128CFUE

Manufacturer Part Number
MC9S12DB128CFUE
Description
IC MCU 128K FLASH 2K EE 80-QFP
Manufacturer
Freescale Semiconductor
Series
HCS12r
Datasheet

Specifications of MC9S12DB128CFUE

Core Processor
HCS12
Core Size
16-Bit
Speed
25MHz
Connectivity
CAN, I²C, SCI, SPI
Peripherals
PWM, WDT
Number Of I /o
59
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Eeprom Size
2K x 8
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.35 V ~ 5.25 V
Data Converters
A/D 16x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
80-QFP
Processor Series
S12D
Core
HCS12
Data Bus Width
16 bit
Data Ram Size
8 KB
Interface Type
CAN, SCI, SPI
Maximum Clock Frequency
50 MHz
Number Of Programmable I/os
59
Number Of Timers
8
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWHCS12
Development Tools By Supplier
M68KIT912DP256
Minimum Operating Temperature
- 40 C
On-chip Adc
2 (10 bit, 8 Channel)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Part Number:
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A.3.2 NVM Reliability
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
The failure rates for data retention and program/erase cycling are specified at the operating conditions
noted.
The program/erase cycle count on the sector is incremented every time a sector or mass erase event is
executed.
4. Burst Programming operations are not applicable to EEPROM
5. Minimum Erase times are achieved under maximum NVM operating frequency f
6. Minimum time, if first word in the array is not blank
7. Maximum time to complete check on an erased block
NOTE:
NOTE:
NOTE:
Conditions are shown in Table A-4 unless otherwise noted
Num C
1
2
All values shown in Table A-12 are target values and subject to further extensive
characterization
Flash cycling performance is 10 cycles at -40˚C to +125˚C. Data retention is
specified for 15 years.
EEPROM cycling performance is 10K cycles at -40˚C to 125˚C. Data retention is
specified for 5 years on words after cycling 10K times. However if only 10 cycles
are executed on a word the data retention is specified for 15 years.
C Flash/EEPROM (-40˚C to +125˚C)
C EEPROM (-40˚C to +125˚C)
Table A-12 NVM Reliability Characteristics
Freescale Semiconductor, Inc.
For More Information On This Product,
Rating
Go to: www.freescale.com
MC9S12DT128B Device User Guide — V01.09
Cycles
10,000
10
NVMOP
Data Retention
.
Lifetime
15
5
Years
Years
Unit

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