MCF52234CAL60 Freescale Semiconductor, MCF52234CAL60 Datasheet - Page 31
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MCF52234CAL60
Manufacturer Part Number
MCF52234CAL60
Description
IC MCU 256K FLASH 60MHZ 112-LQFP
Manufacturer
Freescale Semiconductor
Series
MCF5223xr
Datasheet
1.MCF52236AF50.pdf
(55 pages)
Specifications of MCF52234CAL60
Core Processor
Coldfire V2
Core Size
32-Bit
Speed
60MHz
Connectivity
CAN, Ethernet, I²C, SPI, UART/USART
Peripherals
DMA, LVD, POR, PWM, WDT
Number Of I /o
73
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
112-LQFP
Processor Series
MCF522x
Core
ColdFire V2
Data Bus Width
32 bit
Data Ram Size
32 KB
Interface Type
I2C/QSPI/UART
Maximum Clock Frequency
60 MHz
Number Of Programmable I/os
56
Number Of Timers
10
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
JLINK-CF-BDM26, EWCF
Development Tools By Supplier
M52235EVB, M52233DEMO
Minimum Operating Temperature
- 40 C
On-chip Adc
8-ch x 12-bit
Controller Family/series
ColdFire
No. Of I/o's
73
Ram Memory Size
32KB
Cpu Speed
60MHz
No. Of Timers
1
Embedded Interface Type
CAN, I2C, UART
Rohs Compliant
Yes
A/d Bit Size
12 bit
A/d Channels Available
8
Height
1.45 mm
Length
20 mm
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3 V
Width
20 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MCF52234CAL60
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Part Number:
MCF52234CAL60
Manufacturer:
FREESCALE
Quantity:
20 000
The average chip-junction temperature (T
where
For most applications, PI/O < P
Solving equations 1 and 2 for K gives:
where K is a constant pertaining to the particular part. K can be determined from
for a known T
for any value of T
2.2
Freescale Semiconductor
•
•
•
•
•
1
ESD target for Human Body Model
ESD target for Charged Device Model
HBM circuit description
Number of pulses per pin (HBM)
positive pulses
negative pulses
Number of pulses per pin (CDM)
positive pulses
negative pulses
Interval of pulses (HBM)
Interval of pulses (CDM)
T
P
P
P
A device is defined as a failure if the device no longer meets the device specification requirements after
exposure to ESD pulses. Complete DC parametric and functional testing is performed per applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
A
D
INT
I/O
JMA
ESD Protection
= ambient temperature, C
= P
= power dissipation on input and output pins — user determined
A
= chip internal power, I
. Using this value of K, the values of P
= package thermal resistance, junction-to-ambient, C/W
INT
A
.
+ P
I/O
Characteristic
INT
MCF52235 ColdFire Microcontroller Data Sheet, Rev. 10
and can be ignored. An approximate relationship between P
DD
Table 21. ESD Protection Characteristics
K
V
J
=
) in C can be obtained from
P
DD
D
P
T
, watts
J
D
=
=
T
A
D
T
K
A
+
and T
+
273C
Symbol
T
R
P
HBM
CDM
J
J
series
D
—
—
—
—
—
—
can be obtained by solving
C
+
273C
+
JMA
JMA
1500 (ADC and EPHY pins)
2000 (All other pins)
P
D
2
Equation 3
Value
1500
250
100
1.0
0.2
1
1
3
3
1
Equation 1
by measuring P
D
and T
Electrical Characteristics
and
J
(if P
Equation 2
Units
ohms
I/O
D
sec
sec
pF
—
—
V
V
(at equilibrium)
is neglected) is:
iteratively
Eqn. 1
Eqn. 2
Eqn. 3
31