PIC16LF876A-I/SS Microchip Technology, PIC16LF876A-I/SS Datasheet - Page 38

• Manufacturer Part Number: PIC16LF876A-I/SS
• Description: IC MCU FLASH 8KX14 EE A/D 28SSOP
• Manufacturer: Microchip Technology
• Series: PIC® 16Fr

Specifications of PIC16LF876A-I/SS

• Core Size: 8-Bit
• Program Memory Size: 14KB (8K x 14)
• Core Processor: PIC
• Speed: 10MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 22
• Program Memory Type: FLASH
• Eeprom Size: 256 x 8
• Ram Size: 368 x 8
• Voltage - Supply (vcc/vdd): 2 V ~ 5.5 V
• Data Converters: A/D 5x10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-SSOP
• Controller Family/series: PIC16LF
• No. Of I/o's: 22
• Eeprom Memory Size: 256Byte
• Ram Memory Size: 368Byte
• Cpu Speed: 20MHz
• No. Of Timers: 3
• Package: 28SSOP
• Device Core: PIC
• Family Name: PIC16
• Maximum Speed: 20 MHz
• Operating Supply Voltage: 2.5|3.3|5 V
• Data Bus Width: 8 Bit
• Number Of Programmable I/os: 22
• Interface Type: I2C/SPI/USART
• On-chip Adc: 5-chx10-bit
• Number Of Timers: 3
• Core: PIC
• Processor Series: PIC16LF
• Maximum Clock Frequency: 20 MHz
• Data Ram Size: 368 B
• Data Rom Size: 256 B
• Mounting Style: SMD/SMT
• Height: 1.75 mm
• Length: 10.2 mm
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 2 V
• Width: 5.3 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: PIC16LF876AI/SS

PIC16F87XA
3.5
To read a program memory location, the user must write
two bytes of the address to the EEADR and EEADRH
registers, set the EEPGD control bit (EECON1<7>) and
then set control bit RD (EECON1<0>). Once the read
control bit is set, the program memory Flash controller
will use the next two instruction cycles to read the data.
This causes these two instructions immediately follow-
EXAMPLE 3-3:
DS39582B-page 36
;
;
Reading Flash Program Memory
BSF
BCF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BSF
BSF
NOP
NOP
BCF
MOVF
MOVWF
MOVF
MOVWF
FLASH PROGRAM READ
STATUS, RP1
STATUS, RP0
MS_PROG_EE_ADDR
EEADRH
LS_PROG_EE_ADDR
EEADR
STATUS, RP0
EECON1, EEPGD
EECON1, RD
STATUS, RP0
EEDATA, W
DATAL
EEDATH, W
DATAH
;
; Bank 2
;
; MS Byte of Program Address to read
;
; LS Byte of Program Address to read
; Bank 3
; Point to PROGRAM memory
; EE Read
; Any instructions here are ignored as program
; memory is read in second cycle after BSF EECON1,RD
; Bank 2
; W = LS Byte of Program EEDATA
;
; W = MS Byte of Program EEDATA
;
ing the “BSF EECON1,RD” instruction to be ignored.
The data is available in the very next cycle in the
EEDATA and EEDATH registers; therefore, it can be
read as two bytes in the following instructions. EEDATA
and EEDATH registers will hold this value until another
read or until it is written to by the user (during a write
operation).
 2003 Microchip Technology Inc.