PIC16F639-I/SS Microchip Technology, PIC16F639-I/SS Datasheet - Page 96

• Manufacturer Part Number: PIC16F639-I/SS
• Description: IC MCU FLASH 2KX14 20SSOP
• Manufacturer: Microchip Technology
• Series: PIC® 16Fr

Specifications of PIC16F639-I/SS

• Program Memory Type: FLASH
• Program Memory Size: 3.5KB (2K x 14)
• Package / Case: 20-SSOP
• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 20MHz
• Peripherals: Brown-out Detect/Reset, LVD, POR, WDT
• Number Of I /o: 11
• Ram Size: 128 x 8
• Voltage - Supply (vcc/vdd): 2 V ~ 3.6 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Processor Series: PIC16F
• Core: PIC
• Data Bus Width: 8 bit
• Data Ram Size: 128 B
• Interface Type: SPI
• Maximum Clock Frequency: 20 MHz
• Number Of Programmable I/os: 12
• Number Of Timers: 2
• Operating Supply Voltage: 2 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: 52715-96, 52716-328, 52717-734
• Development Tools By Supplier: PG164130, DV164035, DV244005, DV164005, PG164120
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: XLT20SS1-1 - SOCKET TRANSITION 20DIP 20SSOPXLT20SS-1 - SOCKET TRANSITION 18DIP 20SSOPAC162066 - HEADER INTRFC MPLAB ICD2 20PINAC164307 - MODULE SKT FOR PM3 28SSOP
• Eeprom Size: -
• Data Converters: -
• Connectivity: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

PIC16F630/676
12.7
DS40039C-page 94
DC CHARACTERISTICS
D100
D101
D120
D120A
D121
D122
D123
D124
D130
D130A
D131
D132
D133
D134
Param
Note 1: See Section 8.5.1 for additional information.
No.
†
DC Characteristics: PIC16F630/676-I (Industrial), PIC16F630/676-E (Extended)
(Cont.)
*
C
C
E
E
V
T
T
T
E
E
V
V
T
T
These parameters are characterized but not tested.
Data in ‘Typ’ column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Sym
RETD
REF
RETD
DEW
PEW
D
D
DRW
P
D
PR
PEW
OSC2
IO
Capacitive Loading Specs
on Output Pins
OSC2 pin
All I/O pins
Data EEPROM Memory
Byte Endurance
Byte Endurance
V
Erase/Write cycle time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Program FLASH Memory
Cell Endurance
Cell Endurance
V
V
Erase/Write cycle time
Characteristic Retention
DD
DD
DD
for Read/Write
for Read
for Erase/Write
Characteristic
(1)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ T
100K
V
V
Min
10K
10K
1M
4.5
1K
40
40
—
—
—
—
MIN
MIN
Typ†
100K
100K
10M
10K
1M
—
—
—
—
—
—
—
5
2
Max
15*
50*
5.5
5.5
5.5
2.5
—
—
—
—
—
—
—
6
-40°C ≤ T
Units
Year Provided no other specifications
Year Provided no other specifications
E/W -40°C ≤ T
E/W +85°C ≤ T
E/W -40°C ≤ T
E/W -40°C ≤ T
E/W +85°C ≤ T
ms
ms
pF
pF
V
V
V
A
A
In XT, HS and LP modes when
external clock is used to drive
OSC1
Using EECON to read/write
V
voltage
are violated
V
voltage
are violated
≤ +85°C for industrial
≤ +125°C for extended
 2003 Microchip Technology Inc.
MIN
MIN
= Minimum operating
= Minimum operating
A
A
A
Conditions
A
A
≤ +85°C
≤ +85°C
≤ +85°C
≤ +125°C
≤ +125°C