ATTINY25-20MU Atmel, ATTINY25-20MU Datasheet - Page 161
![IC MCU AVR 2K FLASH 20MHZ 20-QFN](/photos/6/87/68751/313-20-qfn_sml.jpg)
ATTINY25-20MU
Manufacturer Part Number
ATTINY25-20MU
Description
IC MCU AVR 2K FLASH 20MHZ 20-QFN
Manufacturer
Atmel
Series
AVR® ATtinyr
Datasheet
1.ATTINY25-20MU.pdf
(236 pages)
Specifications of ATTINY25-20MU
Core Processor
AVR
Core Size
8-Bit
Speed
20MHz
Connectivity
USI
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
6
Program Memory Size
2KB (1K x 16)
Program Memory Type
FLASH
Eeprom Size
128 x 8
Ram Size
128 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 4x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
20-MLF®, QFN
Processor Series
ATTINY2x
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
128 B
Interface Type
USI
Maximum Clock Frequency
10 MHz
Number Of Programmable I/os
6
Number Of Timers
2
Operating Supply Voltage
2.7 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWAVR, EWAVR-BL
Development Tools By Supplier
ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 4 Channel
For Use With
ATSTK600 - DEV KIT FOR AVR/AVR32ATAVRBC100 - REF DESIGN KIT BATTERY CHARGER770-1007 - ISP 4PORT ATMEL AVR MCU SPI/JTAGATAVRDRAGON - KIT DRAGON 32KB FLASH MEM AVRATAVRISP2 - PROGRAMMER AVR IN SYSTEMATJTAGICE2 - AVR ON-CHIP D-BUG SYSTEM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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20.7.4
2586M–AVR–07/10
Programming the Flash
changed. A Chip Erase must be performed before the Flash and/or EEPROM are re-
programmed.
Note:
The Flash is organized in pages, see
the program data is latched into a page buffer. This allows one page of program data to be pro-
grammed simultaneously. The following procedure describes how to program the entire Flash
memory:
When writing or reading serial data to the ATtiny25/45/85, data is clocked on the rising edge of
the serial clock, see
Figure 20-4. Addressing the Flash which is Organized in Pages
1. Load command “Chip Erase” (see
2. Wait after Instr. 3 until SDO goes high for the “Chip Erase” cycle to finish.
3. Load Command “No Operation”.
1. Load Command “Write Flash” (see
2. Load Flash Page Buffer.
3. Load Flash High Address and Program Page. Wait after Instr. 3 until SDO goes high
4. Repeat 2 through 3 until the entire Flash is programmed or until all data has been
5. End Page Programming by Loading Command “No Operation”.
for the “Page Programming” cycle to finish.
programmed.
1. The EEPROM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
PROGRAM MEMORY
PROGRAM
COUNTER
PAGE
Figure
PAGE ADDRESS
WITHIN THE FLASH
PCMSB
20-5,
PCPAGE
Figure 21-6
Table 20-12 on page
Table
Table
PAGEMSB
PCWORD
and
20-16).
20-16).
WORD ADDRESS
WITHIN A PAGE
Table 21-12
INSTRUCTION WORD
157. When programming the Flash,
PAGE
for details.
PCWORD[PAGEMSB:0]:
00
01
02
PAGEEND
161
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